BD950F Inchange Semiconductor, BD950F Datasheet
BD950F
Manufacturer Part Number
BD950F
Description
isc Silicon PNP Power Transistor
Manufacturer
Inchange Semiconductor
Datasheet
1.BD950F.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·DC Current Gain-
·Complement to Type BD949F/951F/953F/955F
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(T
THERMAL CHARACTERISTICS
isc Website：www.iscsemi.cn
SYMBOL
SYMBOL
R
: h
V
V
V
T
I
P
th j-c
T
CBO
CEO
EBO
I
CM
stg
C
C
FE
J
Silicon PNP Power Transistor
= 40(Min)@ I
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
Thermal Resistance,Junction to Case
Collector-Base Voltage
C
=25℃
C
= -500mA
PARAMETER
PARAMETER
BD950F
BD952F
BD954F
BD956F
BD950F
BD952F
BD954F
BD956F
a
=25
℃)
-65~150
VALUE
-100
-120
-100
-120
150
-60
-80
-60
-80
-5
-5
-8
22
MAX
8.12
UNIT
UNIT
℃/W
℃
℃
W
V
V
V
A
A
BD950F/952F/954F/956F
isc
Product Specification
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BD950F Summary of contents
Page 1
... THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case R th j-c isc Website：www.iscsemi.cn BD950F/952F/954F/956F ℃) =25 a VALUE UNIT BD950F -60 BD952F -80 V BD954F -100 BD956F -120 BD950F -60 BD952F -80 V BD954F -100 BD956F -120 - ℃ 150 ℃ -65~150 MAX UNIT ℃ ...
Page 2
... CEO I Emitter Cutoff Current EBO h DC Current Gain FE Current Gain FE-2 f Current-Gain—Bandwidth Product T Switching Times Turn-On Time t on Turn-Off Time t off isc Website：www.iscsemi.cn BD950F/952F/954F/956F CONDITIONS BD950F BD952F I = -100mA ; BD954F BD956F I = -2A -0. -2A - ...