BC327-16 Infineon Technologies Corporation, BC327-16 Datasheet - Page 3

• Manufacturer Part Number: BC327-16
• Description: PNP Silicon af Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics
at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
V
V
V
Emitter cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
Base-emitter saturation voltage
I
1)
Semiconductor Group
C
C
E
C
C
C
C
CB
CB
CB
CB
EB
= 10 mA
= 100 A
= 10 A
= 100 mA; V
= 300 mA; V
= 500 mA; I
= 500 mA; I
Pulse test: t 300 s, D 2 %.
A
= 25 V
= 45 V
= 25 V, T
= 45 V, T
= 4 V
= 25 ˚C, unless otherwise specified.
A
A
B
B
= 150 ˚C
= 150 ˚C
CE
CE
= 50 mA
= 50 mA
1)
= 1 V
= 1 V
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
1)
1)
BC 328
BC 327
BC 328
BC 327
BC 327
BC 328
BC 327
BC 328
3
Symbol
V
V
V
I
I
h
V
V
CB0
EB0
FE
(BR)CE0
(BR)CB0
(BR)EB0
CEsat
BEsat
min.
45
25
50
30
5
–
–
–
–
–
100
160
250
60
100
170
–
–
Values
typ.
–
–
–
–
–
–
–
–
–
–
160
250
350
–
–
–
–
–
max.
–
–
–
–
–
100
100
10
10
100
250
400
630
–
–
–
0.7
2
BC 327
BC 328
Unit
V
nA
nA
nA
–
V
A
A