BFS520 Philips Semiconductors (Acquired by NXP), BFS520 Datasheet - Page 3
![no-image](/images/no-image-200.jpg)
BFS520
Manufacturer Part Number
BFS520
Description
BFS520; NPN 9 GHZ Wideband Transistor;; Package: SOT323 (UMT3, CMPAK)
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.BFS520.pdf
(11 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFS520
Manufacturer:
NXP
Quantity:
36 000
Company:
Part Number:
BFS520
Manufacturer:
·ЙАыЖЦ
Quantity:
55 000
Part Number:
BFS520
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BFS520(ON5030)
Manufacturer:
飞利蒲
Quantity:
20 000
Part Number:
BFS520,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BFS520Ј¬115
Manufacturer:
NXP
Quantity:
6 000
Philips Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. I
September 1995
R
I
h
C
C
C
f
G
F
P
ITO
j
CBO
T
S
SYMBOL
FE
L1
th j-s
= 25 C, unless otherwise specified.
e
c
re
NPN 9 GHz wideband transistor
UM
SYMBOL
21
G
f
C
p
s
UM
UM
2
= 900 MHz; f
= 20 mA; V
is the temperature at the soldering point of the collector tab.
is the maximum unilateral power gain, assuming S
=
10 log
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
thermal resistance from junction to
soldering point
CE
q
------------------------------------------------------------- - dB.
1
= 6 V; R
= 902 MHz; measured at f
–
PARAMETER
S
11
S
2
L
PARAMETER
21
= 50 ; f = 900 MHz; T
1
2
–
S
22
2
(2p q)
I
I
I
I
I
I
T
I
T
I
T
I
T
f = 900 MHz; T
f = 900 MHz; T
f = 2 GHz; T
I
f = 900 MHz; T
note 2
E
C
C
E
C
C
C
C
C
c
amb
amb
amb
amb
s
s
s
= 20 mA; V
= 0; V
= 20mA; V
= i
= i
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
=
=
=
c
e
= 898 MHz and at f
= 25 C
= 25 C
= 25 C
= 25 C
opt
opt
opt
amb
= 0; V
= 0; V
CE
CB
; I
; I
; I
= 25 C;
C
C
C
up to T
= 6 V
= 6 V; f = 1 MHz
3
12
= 5 mA; V
= 20 mA; V
= 5 mA; V
amb
EB
CB
CONDITIONS
CE
CE
CE
CE
CE
CE
is zero and
amb
amb
amb
= 0.5 V; f = 1 MHz
= 6 V; f = 1 MHz
= 6 V
= 25 C
= 6 V; R
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 2 GHz;
= 6 V; f = 900 MHz;
s
CONDITIONS
= 25 C
= 25 C
= 25 C
= 118 C; note 1
CE
CE
CE
(2q p)
L
= 6 V;
= 6 V;
= 50 ;
= 6 V;
= 904 MHz.
60
13
MIN.
THERMAL RESISTANCE
120
1
0.5
0.4
9
15
9
14
1.1
1.6
1.9
17
26
TYP. MAX.
Product specification
190 K/W
BFS520
50
250
1.6
2.1
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
UNIT