MUN5111 ON Semiconductor, MUN5111 Datasheet - Page 3

• Manufacturer Part Number: MUN5111
• Description: Bias Resistor Transistor PNP
• Manufacturer: ON Semiconductor

4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector–Base Cutoff Current (V
Collector–Emitter Cutoff Current (V
Emitter–Base Cutoff Current
Collector–Base Breakdown Voltage (I
Collector–Emitter Breakdown Voltage (Note 4)
DC Current Gain
Collector–Emitter Saturation Voltage (I
Output Voltage (on)
(V
(I
(V
(I
(I
(V
(V
(V
(V
C
C
C
EB
CE
CC
CC
CC
CC
= 2.0 mA, I
= 10 mA, I
= 10 mA, I
= 6.0 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
MUN5132T1/MUN5133T1/MUN5134T1
C
B
B
C
B
B
B
B
B
= 5 mA) MUN5130T1/MUN5131T1
= 1 mA) MUN5115T1/MUN5116T1/
= 5.0 mA)
= 0)
= 0)
= 2.5 V, R
= 3.5 V, R
= 5.5 V, R
= 4.0 V, R
Characteristic
(Note 4)
L
L
L
L
= 1.0 k )
= 1.0 k )
= 1.0 k )
= 1.0 k )
CB
CE
= 50 V, I
C
= 50 V, I
C
= 10 A, I
= 10 mA, I
(T
A
E
= 25 C unless otherwise noted)
= 0)
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5113T1
MUN5136T1
MUN5137T1
B
= 0)
E
E
= 0)
= 0.3 mA)
MUN5111T1 Series
http://onsemi.com
3
V
V
Symbol
V
(BR)CBO
(BR)CEO
CE(sat)
I
I
I
V
CBO
CEO
EBO
h
FE
OL
Min
160
160
3.0
8.0
50
50
35
60
80
80
15
80
80
80
80
80
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
100
140
140
250
250
140
130
140
150
140
5.0
60
15
27
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
0.18
0.13
0.05
0.13
0.25
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc