NST45010 ON Semiconductor, NST45010 Datasheet - Page 2

• Manufacturer Part Number: NST45010
• Manufacturer: ON Semiconductor

2. h
3. V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (I
Collector −Emitter Breakdown Voltage, (I
Collector −Base Breakdown Voltage, (I
Emitter −Base Breakdown Voltage, (I
Collector Cutoff Current (V
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product, (I
Output Capacitance, (V
Noise Figure, (I
FE(1)
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
BE(1)
C
C
C
C
C
C
C
C
C
C
= −10 mA, V
= −2.0 mA, V
= −2.0 mA, V
= −10 mA, I
= −100 mA, I
= −10 mA, I
= −100 mA, I
= −2.0 mA, V
= −10 mA, V
= −2.0 mA, V
/h
− V
FE(2)
BE(2)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h
C
= −0.2 mA, V
is the absolute difference of one transistor compared to the other transistor within the same package.
B
B
CE
CE
B
B
CE
CE
CE
CE
= −0.5 mA)
= −0.5 mA)
= −5.0 mA)
= −5.0 mA)
= −5.0 V)
= −5.0 V)
= −5.0 V)
= −5.0 V) (Note 2)
= −5.0 V)
= −5.0 V) (Note 3)
CB
(V
CB
CB
= −10 V, f = 1.0 MHz)
= −30 V)
= −30 V, T
CE
Characteristic
= −5 Vdc, R
E
C
C
= −1.0 mA)
A
= −10 mA, V
= −10 mA)
C
C
(T
= 150°C)
= −10 mA)
= −10 mA, V
A
= 25°C unless otherwise noted)
S
= 2 kW, f = 1 kHz, BW = 200Hz)
CE
EB
= −5 Vdc, f = 100 MHz)
http://onsemi.com
= 0)
2
V
h
BE(1) −
FE(1)/
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
I
BE(sat)
BE(on)
C
CBO
h
NF
f
FE
T
ob
h
V
FE(2)
BE(2)
−600
−5.0
Min
−45
−50
−50
220
100
0.9
−
−
−
−
−
−
−
−
−
−
−
−700
−900
−1.0
Typ
150
290
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
FE
is used as numerator.
−300
−650
−750
−820
Max
−5.0
−2.0
−15
475
4.5
10
−
−
−
−
−
−
−
−
−
MHz
Unit
mV
mV
mV
nA
dB
mA
pF
V
V
V
V
−