PBR941B Philips Semiconductors (Acquired by NXP), PBR941B Datasheet - Page 4

• Manufacturer Part Number: PBR941B
• Description: PBR941B; UHF Wideband Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
CHARACTERISTICS
T
Note
1. G
2001 Jan 18
DC characteristics
V
V
V
V
I
I
h
AC characteristics
C
f
|s
G
NF
SYMBOL
j
CBO
EBO
T
FE
= 25 °C unless otherwise specified.
(BR)CBO
(BR)CEO
(BR)EBO
BEF
re
21
UHF wideband transistor
UM
|
2
UM
is the maximum unilateral power gain, assuming s
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
forward base-emitter voltage
collector-base leakage current
emitter-base leakage current
DC current gain
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
noise figure
PARAMETER
I
I
I
I
V
V
I
I
I
I
I
I
T
I
T
Γ
f = 1 GHz
Γ
f = 2 GHz
C
C
E
E
C
C
C
C
C
C
C
S
S
amb
amb
CB
EB
= 10 µA; I
= 25 mA
= 100 µA; I
= 100 µA; I
= 5 mA; V
= 15 mA; V
= 0; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= Γ
= Γ
= 1 V; I
= 10 V; I
= 25 °C; f = 1 GHz
= 25 °C; f = 2 GHz
opt
opt
CB
; I
; I
4
12
CONDITIONS
C
C
C
= 6 V; f = 1 MHz
C
is zero.
CE
= 5 mA; V
= 5 mA; V
E
= 0
E
B
CE
CE
CE
CE
CE
= 0
= 0
= 0
= 0
= 6 V
= 6 V
= 6 V; f
= 6 V; f = 1 GHz
= 6 V;
= 6 V;
G
CE
CE
UM
m
= 6 V;
= 6 V;
= 1 GHz
=
10
log
------------------------------------------------------- - dB
(
20
10
1.5
−
−
−
100
−
−
7
13
−
−
−
−
1
MIN.
–
s
11
Preliminary specification
s
−
−
−
−
−
−
150
150
0.3
9
15
16
10
1.5
2.1
2
TYP.
21
) 1
(
2
–
PBR941B
s
22
−
−
−
1.05
100
100
200
−
−
−
−
−
−
2.5
−
MAX.
2
)
V
V
V
V
nA
nA
pF
GHz
dB
dB
dB
dB
dB
UNIT