PMD9010D Philips Semiconductors (Acquired by NXP), PMD9010D Datasheet - Page 8
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PMD9010D
Manufacturer Part Number
PMD9010D
Description
Two NPN transistors and high-speed switching diode connected in totem pole configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.PMD9010D.pdf
(16 pages)
NXP Semiconductors
PMD9010D_1
Product data sheet
Fig 5. TR1: DC current gain as a function of collector
Fig 7. TR1: Base-emitter voltage as a function of
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
V
(V)
FE
BE
500
400
300
200
100
1.2
1.0
0.8
0.6
0.4
0.2
0
10
10
V
current; typical values
V
collector current; typical values
amb
amb
amb
amb
amb
amb
CE
CE
1
2
= 5 V
= 5 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
10
1
1
(1)
(2)
(3)
1
10
10
(1)
(2)
(3)
10
2
10
I
006aaa923
006aaa925
C
2
I
C
(mA)
(mA)
Rev. 01 — 20 November 2006
10
10
3
3
Fig 6. TR1: Collector current as a function of
Fig 8. TR1: Base-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
(A)
BEsat
I
(V)
0.20
C
0.16
0.12
0.08
0.04
1.2
1.0
0.8
0.6
0.4
0.2
0
10
T
collector-emitter voltage; typical values
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
1
B
= 20
= 25 C
= 55 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
2
10
I
3
B
PMD9010D
(mA) = 5
10
© NXP B.V. 2006. All rights reserved.
2
0.5
1.5
1
4.5
4
3.5
3
2.5
2
4
I
006aaa924
006aaa926
C
MOSFET driver
V
CE
(mA)
(V)
10
5
3
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