KSC5302D Fairchild Semiconductor, KSC5302D Datasheet - Page 2

• Manufacturer Part Number: KSC5302D
• Description: NPN Silicon Transistor
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Electrical Characteristics
*Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10%
BV
BV
BV
I
I
h
h
V
V
C
t
t
t
t
t
V
t
CBO
EBO
ON
STG
F
STG
F
rr
FE1
FE2
CE
BE
F
ob
Symbol
CBO
CEO
EBO
(sat)
(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Turn On time
Storage Time
Fall Time
Storage Time
Fall Time
Diode Forward Voltage
*Reverse Recovery Time
(di/dt = 10A/ s)
Parameter
T
C
=25 C unless otherwise noted
I
I
I
V
V
V
V
I
I
I
I
V
V
I
R
V
I
I
I
I
I
I
I
C
C
E
C
C
C
C
B1
C
B2
F
F
F
F
F
CB
EB
CE
CE
CB
CC
CC
L
=1mA, I
=1mA, I
=5mA, I
=0.4A, I
=1A, I
=0.4A, I
=1A, I
= 0.4A
= 1A
= 0.2A
= 0.4A
= 1A
= 0.8A, I
= 300
= 0.2A, I
= -0.16A , L = 200 H
=500V, I
=1V, I
=1V, I
=300V, I
=15V, V
= 9V, I
= 10V, f=1MHz
Test Condition
B
B
=0.2A
=0.2A
C
E
B
C
C
B
B
C
=0
=0
=0
=0.4A
=1A
=0.04A
=0.04A
B1
B2
Z
E
= 0
C
=300V
=0
= 0.16A
=-0.5A,
=1A
Min.
800
400
12
20
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
800
1.4
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
150
2.35
150
0.4
0.5
0.9
1.0
0.2
1.2
1.5
10
10
75
2
-
-
-
-
-
-
-
-
Rev. B1, December 2002
Units
pF
ns
ns
ns
V
V
V
V
V
V
V
V
V
A
A
s
s
s
s
s