2N3227UB Semicoa Semiconductors, 2N3227UB Datasheet - Page 2

• Manufacturer Part Number: 2N3227UB
• Description: Package = Cersot ;; Level = Jans ;; Vceo (V) = 20 ;; Vcbo (V) = 40 ;; Vebo (V) = 6.0 ;; Ic (A) = 0.20 ;; Power (W) ta = 0.4 ;; Rtja ( C/W) = 325 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 150 ;; VCE(sat) (V) = 0.20
• Manufacturer: Semicoa Semiconductors

Copyright 2002
Rev. J
Off Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Storage Time
Saturated Turn-On Time
Saturated Turn-Off Time
Parameter
Parameter
Parameter
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
ELECTRICAL CHARACTERISTICS
Symbol
Symbol
Symbol
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
C
(BR)CEO
C
I
h
h
h
h
h
|h
I
t
CBO1
CBO2
CBO3
EBO1
EBO2
t
BEsat1
BEsat2
BEsat3
BEsat4
BEsat5
CEsat1
CEsat2
CEsat3
CEsat4
CEX
CES
OFF
OBO
ON
FE1
FE2
FE3
FE4
FE5
t
IBO
FE
s
Semicoa Semiconductors, Inc.
|
www.SEMICOA.com
I
V
V
V
V
T
V
V
V
I
I
I
I
I
T
I
I
I
I
I
I
I
I
I
V
f = 100 MHz
V
100 kHZ < f < 1 MHz
V
100 kHZ < f < 1 MHz
I
I
I
I
I
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B2
C
B2
A
A
CB
CB
CB
CE
CE
EB
EB
= 10mA, I
= 10mA, I
= 10mA, I
CE
CB
EB
= 10 mA
= 10 mA, V
= 30 mA, V
= 10 mA, V
= 100 mA, V
= 10 mA, V
= 10 mA, I
= 30 mA, I
= 100 mA, I
= 10 mA, I
= 30 mA, I
= 100 mA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 125°C
= -55°C
= 1.5 mA
= 1.5 mA
= 10Volts, V
= 20 Volts
= 6 Volts
= 4 Volts
= 10 Volts, I
= 0.5 Volts, I
= 40 Volts
= 32 Volts
= 20 Volts, T
= 5 Volts, I
Test Conditions
Test Conditions
Test Conditions
B
B
B
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
= 1mA,
= 1mA,
= 1mA,
B
B
B
B
B1
B1
B1
CE
CE
CE
CE
B
B
= 1 mA
= 3 mA
= 1 mA
= 3 mA
=I
= 3 mA,
= 3 mA,
CE
E
= 10 mA
= 10 mA
EB
= 0.35 Volts
= 0.4 Volts
= 1 Volts
= 1 Volts
C
= 0 mA,
B2
C
A
= 1 Volts
= 0.25Volts
= 10 mA,
= 0 mA,
= 150°C
= 10 mA
T
T
T
A
A
A
=+125°C
=+125°C
= -55°C
Min
Min
0.70
0.80
0.50
Min
20
70
40
75
30
20
5
characteristics specified at T
2N3227UB
Silicon NPN Transistor
Typ
Typ
Typ
Max
Max
Max
0.25
0.85
0.90
1.20
1.02
0.20
0.25
0.45
0.30
400
250
250
300
150
0.2
10
30
30
10
10
18
12
25
D a t a S h e e t
4
4
Page 2 of 2
A
Units
Units
Units
Volts
Volts
Volts
= 25°C
µA
µA
nA
µA
pF
pF
ns
ns
ns