1PS76SB17 Philips Semiconductors (Acquired by NXP), 1PS76SB17 Datasheet - Page 2

• Manufacturer Part Number: 1PS76SB17
• Description: 1PS76SB17; Schottky Barrier Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323
very small plastic SMD package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Refer to SOD323 standard mounting conditions.
2002 Aug 09
V
I
T
T
V
I
C
R
SYMBOL
SYMBOL
SYMBOL
F
amb
R
stg
j
Low forward voltage
Low diode capacitance
ESD
Very small plastic SMD package.
UHF mixers
Sampling circuits
Modulators
Phase detectors.
R
F
d
th j-a
Schottky barrier diode
= 25 C unless otherwise specified.
500 V; Human body model
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
forward voltage
reverse current
diode capacitance
thermal resistance from junction to ambient
PARAMETER
PARAMETER
PARAMETER
see Fig.2
V
f = 1 MHz; V
f = 1 MHz; V
R
I
I
I
F
F
F
= 3 V; see Fig.3
= 0.1 mA
= 1 mA
= 10 mA
CONDITIONS
R
R
= 0 V; see Fig.4
= 0.5 V; see Fig.4
2
note 1
umns
Marking code: S7.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) and symbol.
CONDITIONS
k
360
470
0.15
0.8
0.65
65
MIN.
TYP.
a
MAM283
Product specification
4
30
+150
100
300
450
600
0.25
1
VALUE
1PS76SB17
MAX.
MAX.
450
V
mA
mV
mV
mV
pF
pF
C
C
A
UNIT
UNIT
UNIT
K/W