MBR20H150CT08 Vishay, MBR20H150CT08 Datasheet

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MBR20H150CT08

Manufacturer Part Number
MBR20H150CT08
Description
Mbr20h150ct - Dual Common-cathode High-voltage Schottky Rectifier
Manufacturer
Vishay
Datasheet
Document Number: 88864
Revision: 27-Jul-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Peak repetitive reverse current per diode at t
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, I
Voltage rate of change (rated V
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
From terminals to heatsink t = 1 minute
Dual Common-Cathode High-Voltage Schottky Rectifier
V
I
I
F(AV)
FSM
RRM
V
T
MBR20H150CT
TO-220AB
F
j
1
2
PIN 1
PIN 3
SB20H150CT-1
3
TO-262AA
R
)
MBR20H150CT, MBRF20H150CT & SB20H150CT-1
C
1
= 25 °C unless otherwise noted)
2
MBRF20H150CT
PIN 2
ITO-220AB
CASE
3
2 x 10 A
p
175 °C
0.75 V
150 V
200 A
= 2 µs, 1 kHz
1
Low Leakage Current 5.0 µA
2
3
AS
= 1.5 A, L = 10 mH
Total device
per diode
FEATURES
TYPICAL APPLICATIONS
For use in high frequency inverters, free-wheeling and
polarity protection applications.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SYMBOL
T
V
J
V
E
I
I
dv/dt
I
V
, T
Vishay General Semiconductor
F(AV)
E
V
RRM
FSM
RWM
RRM
RSM
DC
AS
AC
STG
MBR20H150CT
- 65 to + 175
10000
11.25
1500
150
150
150
200
1.0
20
10
10
www.vishay.com
UNIT
V/µs
mJ
mJ
°C
A
V
V
V
A
A
V
1

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MBR20H150CT08 Summary of contents

Page 1

... A J-STD-002B and JESD22-B102D 150 V E3 suffix for commercial grade 200 A Mounting Torque: 10 in-lbs maximum 0.75 V Polarity: As marked 175 °C Total device per diode = 2 µs, 1 kHz Vishay General Semiconductor SYMBOL MBR20H150CT V 150 RRM V 150 RWM V 150 F(AV) 10 ...

Page 2

... MBR20H150CT, MBRF20H150CT & SB20H150CT-1 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER at I Maximum instantaneous forward at I (1) voltage per diode Maximum reverse current per diode T J (1) at working peak reverse voltage T J Note: (1) Pulse test: 300 µs pulse width duty cycle ...

Page 3

... °C J 100 = 25 °C 0.9 1.0 1.1 1.2 100 ° 100 Figure 6. Typical Transient Thermal Impedance Per Diode Vishay General Semiconductor 10 0 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode 10 MBRF MBR, MBRB 1 0.01 0 Pulse Duration (s) 100 100 www.vishay.com 3 ...

Page 4

... MBR20H150CT, MBRF20H150CT & SB20H150CT-1 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters -220AB 0.398 (10.10) 0.382 (9.70) 0.055 (1.40) 0.150 (3.80) 0.343 (8.70) Dia. 0.047 (1.20) 0.139 (3.54) Typ. 0.114 (2.90) 0.106 (2.70) 0.154 (3.90) 0.067 0.138 (3.50) (1.70) Typ. 0.331 (8.40) 0.634 (16.10) Typ. 0.618 (15.70) PIN 1.161 (29.48) 0.118 1.106 (28.08) (3.00) Typ. 0.035 (0.90) 0.028 (0.70) ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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