FSB660A-NL Fairchild Semiconductor, FSB660A-NL Datasheet - Page 2

• Manufacturer Part Number: FSB660A-NL
• Description: Fsb660 / Fsb660a Pnp Low Saturation Transistor
• Manufacturer: Fairchild Semiconductor

*Pulse Test: Pulse Width
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
OFF CHARACTERISTICS
BV
BV
BV
I
I
ON CHARACTERISTICS*
h
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
f
CBO
EBO
T
Symbol
FE
CE(sat)
BE(sat)
BE(on)
obo
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
300 s, Duty Cycle
Parameter
T
2.0%
A = 25°C unless otherwise noted
I
I
I
V
V
V
I
I
I
I
I
I
I
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
=500mA, V
= 100 A
= 10 mA
= 100 A
= 100 mA, V
= 1 A, V
= 2 A, V
= 1 A, I
= 2 A, I
= 1 A, I
= 1 A, V
= 100 mA,V
= 30 V
= 30 V, T
= 4V
= 10 V, I
Test Conditions
B
B
B
CE
CE
CE
=200 mA FSB660
= 100 mA
= 100 mA
E
CE
= 2 V
= 2 V
= 2 V
A
CE
=100°C
= 0, f = 1MHz
CE
=2V FSB660
= 5 V, f=100MHz
= 2 V
FSB660A
FSB660A
Min
100
250
60
60
70
80
40
75
5
FSB660/FSB660A Rev. B1
300
550
Max
1.25
100
100
300
350
300
10
30
1
Units
mV
nA
uA
nA
pF
V
V
V
V
V
-
-