NTE5368 NTE, NTE5368 Datasheet
NTE5368
Manufacturer Part Number
NTE5368
Description
Silicon Controlled Rectifier (SCR) 125 Amp
Manufacturer
NTE
Datasheet
1.NTE5368.pdf
(2 pages)
Absolute Maximum Ratings: (T
Repetitive Peak Voltages, V
Non–Repetitive Peak Reverse Blocking Voltage, V
Average On–State Current (Half Sine Wave, T
RMS On–State Current, I
Continuous On–State Current, I
Peak One–Cycle Surge (10ms duration, 60% V
Non–Repetitive On–State Current (10ms duration, V
Maximum Permissible Surge Energy (V
Peak Forward Gate Current (Anode positive with respect to cathode), I
Peak Forward Gate Voltage (Anode positive with respect to cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
Peak Gate Power (100 s pulse width), P
Rate of Rise of Off–State Voltage (To 80% V
Rate of Rise of On–State Current, di/dt
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
NTE5368
NTE5369
NTE5368
NTE5369
10ms duration
3ms duration
(Gate drive 20V, 20
(For a device with a maximum forward voltage drop characteristic)
Repetitive
Non–Repetitive
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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G
Silicon Controlled Rectifier (SCR)
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
with t
RGM
stg
T
, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hs
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
r
NTE5368 & NTE5369
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +125 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1 s, anode voltage
, V
R
GM
DSM
thJC
125 Amp
10V), I
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
RRM
= +85 C), I
gate open–circuit), dv/dt
2
RSM
t
re–applied), I
R
10V), I
80% V
T(AV)
TSM (2)
. . . . . . . . . . . . . . . . . . . . . . . . . .
TSM (1)
DRM
)
. . . . . . . . . . . . . . . . . . .
FGM
FGM
. . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
. . . . . . . . . . . .
. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
–40 to +125 C
–40 to +150 C
13600A
10000A
0.23 C/W
1000A/ s
200V/ s
500A/ s
1200V
1300V
1500A
1650A
600V
700V
175A
175A
1.5W
60W
75A
14A
20V
5V
2
2
s
s
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NTE5368 Summary of contents
Page 1
... Operating Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction–to–Case, R (For a device with a maximum forward voltage drop characteristic) NTE5368 & NTE5369 125 Amp = +125 C unless otherwise specified ...
Page 2
Absolute Maximum Ratings (Cont’d): (T Peak On–State Voltage (I TM Forward Conduction Threshold Voltage, V Forward Conduction Slope Resistance, r Repetitive Peak Off–State Current (At V Repetitive Peak Reverse Current (At V Maximum Gate Current (V A Maximum Gate Voltage ...