PDTB113Z Philips Semiconductors, PDTB113Z Datasheet - Page 4

• Manufacturer Part Number: PDTB113Z
• Description: 50 V resistor-equipped transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
6. Thermal characteristics
7. Characteristics
9397 750 14903
Product data sheet
Table 7:
[1]
Table 8:
T
Symbol
R
Symbol Parameter
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input
voltage
on-state input
voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance V
Thermal characteristics
Characteristics
Parameter
thermal resistance
from junction to
ambient
SOT346
SOT54
SOT23
PNP 500 mA resistor-equipped transistors; R1 = 1 k , R2 = 10 k
Rev. 01 — 27 April 2005
Conditions
V
V
V
V
V
I
V
V
I
f = 100 MHz
C
C
CB
CB
CE
EB
CE
CE
CE
CB
= 50 mA; I
= 20 mA
= 5 V; I
= 40 V; I
= 50 V; I
= 50 V; I
= 5 V; I
= 5 V; I
= 0.3 V;
= 10 V; I
Conditions
in free air
C
C
C
B
E
E
E
B
= 0 A
= 50 mA
= 100 A
= 2.5 mA
= i
= 0 A
= 0 A
= 0 A
e
= 0 A;
PDTB113Z series
[1]
Min
-
-
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
70
-
0.7
9
-
0.3
0.4
Typ
-
-
-
Typ
-
-
-
-
-
-
1.0
10
11
0.6
0.8
w w w . D a t a S h e e t 4 U
Max
500
250
500
Max
-
1.3
11
-
100
100
0.5
0.8
0.3
1.0
1.4
Unit
K/W
K/W
K/W
Unit
nA
nA
mA
mV
V
V
k
pF
A
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