PDTC115E Philips Semiconductors, PDTC115E Datasheet - Page 5

• Manufacturer Part Number: PDTC115E
• Description: NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 m copper strip line.
CHARACTERISTICS
T
2004 Aug 06
R
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
th(j-a)
c
NPN resistor-equipped transistors;
R1 = 100 k , R2 = 100 k
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT833
SOT490
PARAMETER
PARAMETER
V
V
V
V
V
I
I
I
f = 1 MHz
C
C
C
E
CB
CE
CE
EB
CE
= i
= 5 mA; I
= 100 A; V
= 1 mA; V
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
e
= 0 A; V
5
CONDITIONS
C
B
C
in free air
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
notes 1 and 2
CE
E
B
B
= 0 A
= 0.25 mA
= 5 mA
CE
CB
= 0 A
= 0 A
= 0 A; T
= 0.3 V
CONDITIONS
= 5 V
= 10 V;
j
= 150 C
80
3
70
0.8
MIN.
PDTC115E series
VALUE
250
500
500
625
833
500
500
1.1
1.5
100
1
TYP.
Product specification
100
1
50
50
150
0.5
130
1.2
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
mV
V
V
k
pF
UNIT
A
A
A