M54561P Mitsubishi Electric Semiconductor, M54561P Datasheet - Page 2

• Manufacturer Part Number: M54561P
• Description: 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
• Manufacturer: Mitsubishi Electric Semiconductor

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RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
SWITCHING CHARACTERISTICS
NOTE 1 TEST CIRCUIT
I
V
I
V
V
I
V
V
I
h
t
t
I
O
S (leak)
R
on
off
Symbol
Symbol
Symbol
FE
S
IH
IL
CE (sat)
F
conditions.
PG
Supply voltage
Output current
per channel
“H” input voltage
“L” input voltage
Supply leak current
Collector-emitter saturation voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
Turn-on time
Turn-off time
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
(2) Input-output conditions : R
(3) Electrostatic capacity C
tw = 10 s, tr = 6ns, tf = 6ns, Z
V
connections and input capacitance at probes
50
IN
INPUT
= 7 to 10.3V
Parameter
Parameter
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Parameter
Percent duty cycle less
than 10%
Percent duty cycle less
than 50%
V
S
Measured device
L
includes floating capacitance at
L
(Unless otherwise noted, Ta = 25°C)
= 40 , V
(Unless otherwise noted, Ta = –20 ~ +75°C)
O
OPEN
= 50
V
V
V
V
I
V
V
C
R
F
S
I
I
I
R
CE
L
L
= –300mA
= V
= V
= V
= 15pF (note 1)
= 40V
= 40V
S
= 4V, I
= 10V
S
S
S
C
–3.5V,
–3V, I
–3V, I
L
(Unless otherwise noted, Ta = –20 ~ +75°C)
O
V
O
O
= –300mA, Ta =25°C
OUTPUT
S
min
= –300mA
= –100mA
–0.2
0
0
0
0
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
Test conditions
Test conditions
Limits
TIMING DIAGRAM
typ
—
—
—
—
—
OUTPUT
INPUT
V
V
–300
–100
max
S
S
+0.3
40
–3
50%
Unit
mA
50%
V
V
V
ton
1000
min
min
—
—
—
—
—
—
—
—
Limits
–150
Limits
8000
2500
1.65
1.45
–1.6
typ
typ
200
—
—
+
M54561P
50%
toff
–250
max
–2.4
max
100
100
—
—
—
2.4
2.0
50%
Aug. 1999
Unit
Unit
—
ns
ns
V
V
A
A
A