A2112 Sanyo Semicon Device, A2112 Datasheet

A2112

Manufacturer Part Number

A2112

Description

Search -----> 2SA2112

Manufacturer

Sanyo Semicon Device

Datasheet

1.A2112.pdf (4 pages)

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w w w . D a t a S h e e t 4 U . c o m

Ordering number : ENN7379

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

•

DC-DC converter, relay drivers, lamp drivers,

motor drivers, strobes.

Adoption of MBIT process.

Large current capacitance.

Low collector-to-emitter saturation voltage.

High-speed switching.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

V CBO

V CEO

V CES

V EBO

I CBO

I EBO

Tstg

h FE

I CP

P C

I C

I B

f T

V CB =- -40V, I E =0

V EB =- -4V, I C =0

V CE =- -2V, I C =--100mA

V CE =- -10V, I C =--500mA

High Current Switching Applications

2SA2112

Conditions

Package Dimensions

unit : mm

2064A

Conditions

0.9

2.54

PNP Epitaxial Planar Silicon Transistors

6.9

0.6

[2SA2112]

min

200

0.5

N2503 TS IM TA-3749

2.54

1.45

Ratings

typ

Ratings

390

1 : Emitter

2 : Collector

3 : Base

SANYO : NMP

2SA2112

2.5

Continued on next page.

--55 to +150

0.45

max

1.0

--600

150

--50

560

--6

--3

--6

--1

No.7379-1/4

MHz

Unit

Related parts for A2112

A2112 Summary of contents

Page 1

... Tstg Symbol Conditions I CBO -40V EBO -4V -2V =--100mA -10V =--500mA SANYO Electric Co.,Ltd. Semiconductor Company PNP Epitaxial Planar Silicon Transistors 2SA2112 [2SA2112] 2.5 1.45 6.9 1.0 0.6 0 Emitter 2 : Collector 3 : Base 2.54 2.54 SANYO : NMP ...

Page 2

... Collector-to-Emitter Voltage --3 --2V --2.5 --2.0 --1.5 --1.0 --0 --0.2 --0.4 Base-to-Emitter Voltage 2SA2112 Symbol Conditions Cob V CB =--10V, f=1MHz V CE (sat =--1A =--50mA V CE (sat =--2A =--100mA V BE (sat =--2A =--100mA V( BR) CBO I C =-- BR) CES I C =--100 ...

Page 3

... Collector Current 1000 100 --0.01 Collector Current 1.2 1.0 0.8 0.6 0.4 0 Ambient Temperature 2SA2112 = --0.1 --1.0 IT05445 V BE (sat = --0.1 --1.0 IT05447 --10V ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2003. Specifications and information herein are subject to change without notice. 2SA2112 No.7379-4/4 PS ...

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