MT58L64V36F Micron Semiconductor, MT58L64V36F Datasheet - Page 14

• Manufacturer Part Number: MT58L64V36F
• Description: (MT58LxxxLxxF) 2Mb SRAM
• Manufacturer: Micron Semiconductor

NOT RECOMENDED FOR NEW DESIGNS
SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
NOTE: 1. This parameter is sampled.
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_C.p65 – Rev. C, Pub. 11/02
SNOOZE MODE ELECTRICAL CHARACTERISTICS
Outputs (Q)
ALL INPUTS
(except ZZ)
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
SNOOZE MODE is a low-current, “power-down”
I
SUPPLY
CLK
ZZ
SB
2
Z
. The duration of SNOOZE MODE is
t ZZI
t ZZ
I ISB2Z
SNOOZE MODE WAVEFORM
CONDITIONS
ZZ ≥ V
IH
14
FLOW-THROUGH SYNCBURST SRAM
High-Z
that causes the device to enter SNOOZE MODE. When
the ZZ pin becomes a logic HIGH, I
after the setup time
when the device enters SNOOZE MODE is not guaran-
teed to complete successfully. Therefore, SNOOZE
MODE must not be initiated until valid pending opera-
tions are completed.
The ZZ pin is an asynchronous, active HIGH input
SYMBOL
2Mb: 128K x 18, 64K x 32/36
t
t
I
t
RZZI
SB
t
RZZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ZZI
ZZ
2Z
MIN
t
KC
0
t
ZZ is met. Any access pending
DESELECT or READ Only
t RZZI
MAX
t
t
10
KC
KC
t RZZ
SB
UNITS
2
mA
ns
ns
ns
ns
Z
©2002, Micron Technology, Inc.
is guaranteed
DON’T CARE
NOTES
1
1
1
1