STB160NF3LL ST Microelectronics, STB160NF3LL Datasheet - Page 3

• Manufacturer Part Number: STB160NF3LL
• Description: N-CHANNEL POWER MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by T
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
Q
d(off)
RRM
Q
SD
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
g
rr
(*)
(
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)
(*)
jmax
Parameter
Parameter
Parameter
(*)
V
R
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 5)
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 4.7
= 160 A
= 160 A
=24V I
= 15 V
= 15 V
= 15 V
Test Conditions
Test Conditions
Test Conditions
D
=160A V
di/dt = 100A/µs
T
V
V
j
GS
V
GS
= 150°C
I
GS
D
GS
I
= 0
D
= 4.5 V
= 80 A
= 4.5 V
=5V
= 80 A
Min.
Min.
Min.
Typ.
Typ.
Typ.
350
150
120
200
50
95
25
45
90
5
STB160NF3LL
Max.
Max.
Max.
160
640
125
1.3
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
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