TS12 STMicroelectronics, TS12 Datasheet - Page 5

• Manufacturer Part Number: TS12
• Description: SENSITIVE & STANDARD(12A SCRs)
• Manufacturer: STMicroelectronics

10.0
Fig.
impedance junction to ambient versus pulse
duration (recommended pad layout, FR4 PC
board).
Fig. 4-2: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature for TN12 & TYN
series.
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS12 series.
1.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.00
0.10
0.01
-40
0.0
1E-2
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 C]
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
K = [Zth(j-a)/Rth(j-a)]
3-2:
-20
IGT
0.2
1E-1
0
Relative
0.4
D
20
2
PAK
1E+0
Rgk(k )
40
DPAK
Tj( C)
tp(s)
0.6
variation
60
1E+1
TO-220AB
0.8
80
100
VD = 0.67 x VDRM
IH & IL
of
1E+2
Tj = 125 C
1.0
120
thermal
5E+2
1.2
140
Fig. 4-1: Relative variation of gate trigger
current, holding current and latching versus
junction temperature for TS12 series.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS12 series.
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS12 series.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
-40
IH[Rgk] / IH[Rgk = 1k ]
0
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 C]
dV/dt[Cgk] / dV/dt [Rgk = 220 ]
VD = 0.67 x VDRM
Rgk = 220
Tj = 125 C
-20
25
IGT
TN12, TS12 and TYNx12 Series
0
1E-1
20
50
40
Rgk(k )
Tj( C)
Cgk(nF)
75
60
Rgk = 1k
IH & IL
1E+0
100
80
100
125
Tj = 25 C
120
1E+1
140
150
5/10