P10090-21 Hamamatsu Photonics, K.K.,, P10090-21 Datasheet - Page 2

• Manufacturer Part Number: P10090-21
• Description: Inas Photovoltaic Detectors
• Manufacturer: Hamamatsu Photonics, K.K.,

P10090-01
P10090-11
P10090-21
P7163
Dark current vs. reverse voltage
Electrical and optical characteristics (Typ. unless otherwise noted)
Spectral response (D*)
Type No.
100 µA
10 µA
1 mA
1 µA
0.01
temperature
InAs photovoltaic detectors
Measurement-
Element
condition
-196
(°C)
-10
-30
25
T
Reverse voltage (V)
wavelength
sensitivity
0.1
(μm)
3.35
3.30
3.25
3.00
Peak
λp
T= -10 °C
T= -30 °C
T=25 °C
wavelength
Cut-off
(μm)
3.65
3.55
3.45
3.1
λc
(Typ.)
1
KIRDB0356EC
KIRDB0382EA
sensitivity
(A/W)
Photo
λ=λp
1.0
1.2
1.3
S
1 × 10
Shunt resistance
1000
Min.
(Ω)
250
40
5
Rsh
Spectral response
Shunt resistance vs. element temperature (P10090 series)
1 × 10
1300
100 k
Typ.
400
(Ω)
10 k
100
70
10
1 k
1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
P10090 series, P7163
Ω
Ω
Ω
Ω
Ω
Ω
0
-100
1.0
6
(cm · Hz
1.0 × 10
2.0 × 10
3.5 × 10
3.0 × 10
-80
1.5
Min.
Element temperature (°C)
-60
(λp, 600, 1)
1/2
/W)
2.0
Wavelength (µm)
10
10
11
9
-40
D*
(cm · Hz
1.6 × 10
3.2 × 10
6.0 × 10
4.5 × 10
2.5
-20
T= -30 °C
Typ.
T= -10 °C
T=25 °C
1/2
0
3.0
/W)
10
10
11
9
20
1.5 × 10
5.3 × 10
2.8 × 10
1.5 × 10
(W/Hz
3.5
40
λ=λp
NEP
(Typ.)
(Typ.)
1/2
4.0
60
KIRDB0381EA
-11
-12
-12
-13
)
KIRDB0383EA
0 to 63 %
Rise time
R
V
L
R
=50 Ω
0.70
0.45
0.30
0.10
(μs)
=0 V
tr
2