SST29VE010 SST, SST29VE010 Datasheet - Page 8

• Manufacturer Part Number: SST29VE010
• Description: 1 Mbit (128K x8) Page-Mode EEPROM
• Manufacturer: SST

www.DataSheet4U.com
TABLE 5: DC O
TABLE 6: DC O
©2001 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
I
V
V
V
V
Symbol
I
I
I
I
I
V
V
V
V
DD
SB1
SB2
LI
LO
DD
SB1
SB2
LI
LO
IL
IH
OL
OH
IL
IH
OL
OH
Parameter
Power Supply Current
Read
Write
Standby V
(TTL input)
Standby V
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Parameter
Power Supply Current
Read
Write
Standby V
(TTL input)
Standby V
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
PERATING
PERATING
DD
DD
DD
DD
Current
Current
Current
Current
C
C
HARACTERISTICS
HARACTERISTICS
Min
Min
V
V
2.0
2.4
2.0
2.4
DD
DD
= 3.0-3.6V
= 5.0V±10%
Limits
Limits
Max
Max
0.8
0.4
0.8
0.4
SST29EE010 / SST29LE010 / SST29VE010
30
50
50
10
12
15
15
10
3
1
1
1
8
Units
Units
mA
mA
mA
mA
mA
mA
FOR
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
FOR
SST29LE010
Test Conditions
Address input=V
V
CE#=OE#=V
CE#=WE#=V
CE#=OE#=WE#=V
CE#=OE#=WE#=V
V
V
V
V
I
I
Test Conditions
Address input=V
V
CE#=OE#=V
CE#=WE#=V
CE#=OE#=WE#=V
CE#=OE#=WE#=V
V
V
V
V
I
I
SST29EE010
OL
OH
OL
OH
DD
IN
OUT
DD
DD
DD
IN
OUT
DD
DD
=2.1 mA, V
=100 µA, V
=-400 µA, V
=GND to V
=-100 µA, V
=V
=GND to V
=V
=V
=V
=V
=V
=GND to V
=GND to V
1 Mbit Page-Mode EEPROM
DD
DD
DD
DD
DD
DD
Max
Min
Max
Max
Min
Max
IL
IL
IL
IL
AND
DD
DD
DD
, WE#=V
, WE#=V
, OE#=V
DD
, OE#=V
DD
DD
DD
=V
, V
=V
IL
DD
IL
, V
=V
=V
/V
/V
, V
, V
2.7-3.0V
IH
DD
IH
DD
DD
DD
DD
DD
IH
IH
DD
DD
, V
, V
DD
DD
=V
, at f=1/T
, at f=1/T
-0.3V, V
-0.3V, V
=V
Min
Min
IH
IH
Min
IH
IH
=V
Min
DD
DD
=V
DD
, all I/Os open
, V
DD
, all I/Os open
, V
=V
=V
DD
DD
Max
DD
DD
Max
DD
DD
FOR
Max
Max
DD
DD
=V
=V
S71061-07-000 6/01
RC
RC
Max
Max
=V
=V
DD
DD
Min,
Min,
SST29VE010
DD
DD
Max
Max
Data Sheet
Max
Max
T5.3 304
T6.3 304
304