SST39VF160 Silicon Storage Technology, SST39VF160 Datasheet

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SST39VF160

Manufacturer Part Number
SST39VF160
Description
16 Megabit (1M x 16-Bit) Multi-Purpose Flash
Manufacturer
Silicon Storage Technology
Datasheet

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FEATURES:
• Organized as 1 M X 16
• Single 2.7V-only Read and Write Operations
• V
• Superior Reliability
• Low Power Consumption:
• Small Sector Erase Capability (512 sectors)
• Block Erase Capability (32 blocks)
• Fast Read Access Time:
PRODUCT DESCRIPTION
The SST39VF160Q/VF160 devices are 1M x 16 CMOS
Multi-Purpose Flash (MPF) manufactured with SST’s
proprietary, high performance CMOS SuperFlash tech-
nology. The split-gate cell design and thick oxide tunnel-
ing injector attain better reliability and manufacturability
compared
SST39VF160Q/VF160 write (Program or Erase) with a
2.7V-only power supply. The SST39VF160Q/VF160
conform to JEDEC standard pinouts for x16 memories.
Featuring high performance word program, the
SST39VF160Q/VF160 devices provide a maximum
word-program time of 10 µsec. The entire memory can
typically be erased and programmed word by word in 7
seconds, when using interface features such as Toggle
Bit or Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, the
SST39VF160Q/VF160 have on-chip hardware and soft-
ware data protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, the
SST39VF160Q/VF160 are offered with a guaranteed
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST39VF160Q/VF160 devices are suited for appli-
cations that require convenient and economical updating
of program, configuration, or data memory. For all sys-
tem applications, the SST39VF160Q/VF160 signifi-
cantly improve performance and reliability, while lower-
ing power consumption. The SST39VF160Q/VF160 in-
herently use less energy during Ease and Program than
© 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon storage Technology, Inc.
329-09 11/98
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Active Current: 15 mA (typical)
- Standby Current: 3 µA (typical)
- Auto Low Power Mode: 3 µA (typical)
- Uniform 2 KWord sectors
- Uniform 32 KWord blocks
- 70 and 90 ns
for SST39VF160Q
DDQ
- V
Power Supply to Support 5V I/O
DDQ
16 Megabit (1M x 16-Bit) Multi-Purpose Flash
with
not available on SST39VF160
alternate
SST39VF160Q / SST39VF160
approaches.
The
1
• Latched Address and Data
• Fast Sector Erase and Word Program:
• Automatic Write Timing
• End of Write Detection
• CMOS I/O Compatibility
• JEDEC Standard
• Packages Available
alternative flash technologies. The total energy con-
sumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed
during any Erase or Program operation is less than
alternative flash technologies. The SST39VF160Q/
VF160 also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of endurance
cycles that have occurred. Therefore the system
software or hardware does not have to be modified or
de-rated as is necessary with alternative flash technolo-
gies, whose erase and program times increase with
accumulated endurance cycles.
To meet high density, surface mount requirements, the
SST39VF160Q/VF160 are offered in 48-pin TSOP and
48-pin TFBGA packages. See Figures 1 and 2 for
pinouts.
Device Operation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the
device using standard microprocessor write sequences.
A command is written by asserting WE# low while
keeping CE# low. The address bus is latched on the
falling edge of WE# or CE#, whichever occurs last. The
data bus is latched on the rising edge of WE# or CE#,
whichever occurs first.
- Sector Erase Time: 3 ms typical
- Block Erase Time: 7 ms typical
- Chip Erase Time: 15 ms typical
- Word Program time: 7 µs typical
- Chip Rewrite Time: 7 seconds
- Toggle Bit
- Data# Polling
- EEPROM Pinouts and command set
- 48-Pin TSOP (12mm x 20mm)
- 6 x 8 Ball TFBGA
- Internal V
pp
These specifications are subject to change without notice.
Generation
Advance Information
5
6
7
8
13
14
15
16
1
2
3
4
9
10
11
12

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SST39VF160 Summary of contents

Page 1

... Uniform 32 KWord blocks • Fast Read Access Time and 90 ns PRODUCT DESCRIPTION The SST39VF160Q/VF160 devices are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash tech- nology. The split-gate cell design and thick oxide tunnel- ing injector attain better reliability and manufacturability ...

Page 2

... Data# Polling ( When the SST39VF160Q/VF160 are in the internal Pro- gram operation, any attempt to read DQ complement of the true data. Once the Program operation is completed, DQ will produce true data. The device is ...

Page 3

... It should be tied to V (2.7V - 3.6V 3.0V-only system should be tied to a 5.0V±10% (4.5V - 5.5V) power supply . The mixed voltage system environment where flash memory has to be interfaced with 5V system chips. The V pin is not offered on the SST39VF160, instead DDQ No Connect pin ...

Page 4

... A1 E DQ7 A16 A0 F CE# G DQ13 DQ15 OE# H DQ6 329 ILL F02.4 TFBGA PIN 4 16 Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information 16,777,216 bit EEPROM Cell Array Y-Decoder DDQ 329 ILL B1 Standard Pinout 40 ...

Page 5

... To activate the device when CE# is low. To gate the data output buffers. To control the write operations. To provide 3-volt supply (2.7-3.6V) Supplies power for input/output buffers. It should be either tied to V (2.7 - 3.6V) for 3V I 5.0V (4.5V - 5.5V) power supply to support 5V I/O. (Not offered on SST39VF160 device, instead NC) Unconnected pins. OE# WE ...

Page 6

... Care” for Command sequence 15 8 Notes for Software ID Entry Command Sequence 1. With A -A =0; SST Manufacturer Code = 00BFH, is read with SST39VF160Q/VF160 Device Code = 2782H, is read with A 2. The device does not remain in Software Product ID Mode if powered down CFI ABLE UERY DENTIFICATION ...

Page 7

... Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information ABLE YSTEM NTERFACE NFORMATION Address Data 1BH 0027H 1CH 0036H 1DH 0000H 1EH 0000H 1FH 0003H 20H 0000H 21H 0001H 22H 0009H 23H 0001H 24H 0000H 25H 0001H 26H 0001H ...

Page 8

... Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C (1) ................................................................................................................................................................. Output Short Circuit Current (1) Note: Outputs shorted for no more than one second. No more than one output shorted at a time. (2) The absolute maximum stress ratings for SST39VF160 are referenced PERATING ANGE Range Ambient Temp Commercial 0 ° ...

Page 9

... Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information ABLE PERATING HARACTERISTICS Symbol Parameter I Power Supply Current DD Read Program and Erase I Standby V Current Auto Low Power Current ALP I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL V Input Low Voltage (CMOS) ...

Page 10

... AC CHARACTERISTICS T 12: SST39VF160Q/VF160 R ABLE Symbol Parameter T Read Cycle time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time OE (1) T CE# Low to Active Output CLZ (1) T OE# Low to Active Output OLZ (1) T CE# High to High-Z Output CHZ (1) T OE# High to High-Z Output ...

Page 11

... Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information ADDRESS A 19-0 CE# OE WE# HIGH IGURE EAD YCLE IMING IAGRAM 5555 ADDRESS WPH OE# CE# DQ 15-0 XXAA SW0 IGURE ONTROLLED ROGRAM © 1998 Silicon Storage Technology, Inc. ...

Page 12

... XX55 XXA0 DATA SW1 SW2 WORD (ADDR/DATA YCLE IMING IAGRAM OEH IAGRAM 12 16 Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information INTERNAL PROGRAM OPERATION STARTS 329 ILL F05.2 T OES D# D 329 ILL F06.2 329-09 11/98 ...

Page 13

... Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information ADDRESS A 19-0 CE# OE# WE NOTE: (1) TOGLE BIT OUTPUT IS ALWAYS HIGH FIRST IGURE OGGLE IT IMING IAGRAM 5555 ADDRESS A 19-0 CE# OE WE# DQ 7-0 AA SW0 Note: The device also supports CE# controlled chip erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met ...

Page 14

... SW4 RASE IMING IAGRAM SIX-BYTE CODE FOR SECTOR ERASE 2AAA 5555 5555 2AAA SW1 SW2 SW3 SW4 RASE IMING IAGRAM 14 SST39VF160Q / SST39VF160 Advance Information SW5 329 ILL F17 SW5 329 ILL F18.2 329-09 11/98 ...

Page 15

... Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information Three-byte sequence for ADDRESS A 14-0 5555 2AAA CE# OE WE# DQ 15-0 XXAA SW0 F 11 IGURE OFTWARE NTRY AND Three-byte sequence for CFI Query Entry 5555 2AAA ADDRESS A 14-0 CE# OE WE# DQ 15-0 XXAA SW0 F 12: CFI Q E IGURE ...

Page 16

... SOFTWARE ID EXIT AND RESET 5555 2AAA ADDRESS A 14-0 DQ 7-0 AA CE# OE WE# SW0 F 13 /CFI E IGURE OFTWARE XIT © 1998 Silicon Storage Technology, Inc. 16 Megabit Multi-Purpose Flash 5555 IDA T WHP SW1 SW2 XIT 16 SST39VF160Q / SST39VF160 Advance Information 329 ILL F10.0 329-09 11/98 ...

Page 17

... Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information 2.4 INPUT 0.4 AC test inputs are driven at V (2.4 V) for a logic “1” and V OH for inputs and outputs are V (2.0 V) and 14 IGURE NPUT UTPUT EFERENCE Test conditions: Output load: 100 pF Input rise and fall time Measurement reference level: 0 ...

Page 18

... F 16 IGURE ORD ROGRAM LGORITHM © 1998 Silicon Storage Technology, Inc. 16 Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Start Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: A0 Address: 5555 Word Address/Word Data Wait for end of Program ( Data# Polling bit, or Toggle bit ...

Page 19

... Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed F 17 IGURE AIT PTIONS © 1998 Silicon Storage Technology, Inc. Toggle Bit Word Program/Erase Initiated Read word Read same No word No Does DQ 6 match? ...

Page 20

... Address: 5555 Address: 5555 Wait T IDA Wait T IDA Return to normal Read Software ID operation F OMMAND LOWCHARTS 20 16 Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information Software ID Exit/CFI Exit Command Sequence Write data: XXF0 Address: XX Wait T IDA Return to normal operation 329 ILL F15.5 329-09 11/98 ...

Page 21

... Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information Chip Erase Command Sequence Write data: XXAA Address: 5555 Write data: XX55 Address: 2AAA Write data: XX80 Address: 5555 Write data: XXAA Address: 5555 Write data: XX55 Address: 2AAA Write data: XX10 Address: 5555 ...

Page 22

... U = Unencapsulated die Temperature Range C = Commercial = 0° to 70° Industrial = -40° to 85°C Minimum Endurance 4 = 10,000 cycles Read Access Speed ns Version Voltage V = 2.7V-only SST39VF160Q-90-4C-U1 SST39VF160-90-4C- Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information pin for I/O power supply DDQ 329-09 11/98 ...

Page 23

... Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information PACKAGING DIAGRAMS 1.10 PIN # 1 IDENT. DIA. 1.00 0.90 0.70 0.50 Note: 1. Complies with JEDEC publication 95 MO-142 DD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in metric (min/max). 3. Coplanarity: 0.1 (±.05) mm. 48 EAD HIN MALL UTLINE ACKAGE ...

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