BSP19 Philips Semiconductors, BSP19 Datasheet - Page 3

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BSP19

Manufacturer Part Number
BSP19
Description
NPN high-voltage transistors
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
1999 Jun 01
R
R
I
I
h
V
C
f
SYMBOL
j
CBO
EBO
T
SYMBOL
FE
CEsat
th j-a
th j-s
= 25 C unless otherwise specified.
c
NPN high-voltage transistors
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
PARAMETER
PARAMETER
I
I
V
I
I
V
E
C
C
E
CE
CE
= 0; V
= i
= 0; V
= 50 mA; I
= 10 V; I
= 10 V; I
e
= 0; V
3
CE
EB
= 300 V
= 5 V
CONDITIONS
CB
C
B
C
= 4 mA
= 20 mA
= 10 mA; f = 100 MHz 70
note 1
= 10 V; f = 1 MHz
CONDITIONS
40
MIN.
BSP19; BSP20
VALUE
104
23
Product specification
20
100
0.5
2.5
MAX.
2
.
UNIT
K/W
K/W
nA
nA
V
pF
MHz
UNIT

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