CMBT5401 CDIL, CMBT5401 Datasheet - Page 2

• Manufacturer Part Number: CMBT5401
• Description: SILICON PLANAR EPITAXIAL TRANSISTORS
• Manufacturer: CDIL

www.datasheet4u.com
Continental Device India Limited
Total power dissipation up to T
Junction temperature
Storage temperature
THERMAL RESISTANCE
CHARACTERISTICS (at T
Collector cut–off current
Breakdown voltages
Saturation voltages
D.C. current gain
Small–signal current gain
Output capacitance at f = 1 MHz
Transition frequency at f = 100 MHz
Noise figure at R
from junction to ambient
I
I
I
I
I
–I
–I
I
I
I
I
I
–I
I
f = 10 Hz to 15.7 kHz; T
E
E
C
C
C
C
C
C
C
E
C
C
C
C
= 0; –V
= 0; –V
= 0; –V
= 1 mA; I
= 100 A; I
= 0; I
= 1 mA; –V
= 10 mA; –V
= 50 mA; –V
= 1 mA; –V
= 200 A; –V
= 10 mA; –I
= 50 mA; –I
= 10 mA; –V
E
CB
= 10 A
CB
CB
B
S
= 120 V
= 10 V
= 120 V; T
E
= 10
= 0
CE
CE
CE
CE
= 0
CE
B
B
CE
= 5 V
= 10 V; f = 1 kHz
= 1 mA
= 5 mA
= 5 V
= 5 V
= 5 V
= 10 V; T
A
amb
amb
= 25°C unless otherwise specified)
amb
= 150 °C
= 25 °C
amb
= 25°C
Data Sheet
= 25 °C
P
T
T
R
–I
–I
–V
–V
–V
–V
–V
–V
–V
h
h
h
h
C
f
F
T
j
FE
FE
FE
fe
tot
stg
th j–a
o
CBO
CBO
(BR)CEO
(BR)CBO
(BR)EBO
BEsat
BEsat
CEsat
CEsat
max
max.
max.
max.
min.
min.
min.
max.
max.
max.
max.
min.
min.
max.
min.
min.
max.
max.
min.
max.
max.
CMBT5401
–55 to +150 ° C
250 mW
150 ° C
500 K/W
150 V
160 V
240
200
100 MHz
300 MHz
0.2 V
0.5 V
50 nA
50
50
60
50
40
5 V
1 V
1 V
6 pF
8 dB
A
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