2SD0601 Panasonic Semiconductor, 2SD0601 Datasheet
2SD0601
Manufacturer Part Number
2SD0601
Description
Silicon NPN epitaxial planer type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD0601.pdf
(2 pages)
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Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB709A
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Collector output capacitance
FE1
Features
High foward current transfer ratio h
Low collector to emitter saturation voltage V
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE1
160 ~ 260
Symbol
V
V
V
I
I
P
T
T
ZQ
CP
C
Q
C
j
stg
CBO
CEO
EBO
I
I
V
V
V
h
h
V
f
NV
C
CBO
CEO
T
FE1
FE2
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
ob
*
(Ta=25˚C)
FE
210 ~ 340
–55 ~ +150
.
Ratings
ZR
R
200
100
200
150
60
50
7
V
V
I
I
I
V
V
I
V
V
R
V
CE(sat)
C
C
E
C
g
CB
CE
CE
CE
CB
CE
CB
= 10 A, I
= 2mA, I
= 10 A, I
= 100mA, I
= 100k , Function = FLAT
= 10V, I
= 10V, I
= 2V, I
= 10V, I
= 20V, I
= 10V, I
= 10V, I
290 ~ 460
.
ZS
S
C
B
Unit
mW
C
mA
mA
Conditions
E
B
C
C
˚C
˚C
E
E
E
V
V
V
= 100mA
= 0
= 0
= 0
B
= 0
= 0
= 2mA
= –2mA, f = 200MHz
= 1mA, G
= 0, f = 1MHz
= 10mA
V
= 80dB
Marking symbol :
1:Base
2:Emitter
3:Collector
0.1 to 0.3
0.65 0.15
0.4 0.2
min
160
60
50
90
7
1
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
150
110
Z
typ
0.1
3.5
1.5
2.8
+0.2
–0.3
+0.25
–0.05
max
100
460
0.1
0.3
3
0.65 0.15
Unit: mm
MHz
Unit
mV
pF
V
V
V
V
A
A
1
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2SD0601 Summary of contents
Page 1
Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A Features High foward current transfer ratio h Low collector to emitter saturation voltage V Mini type package, allowing downsizing of the equipment and automatic insertion through the ...
Page 2
Transistor P — 240 200 160 120 100 120 140 160 Ambient temperature Ta ( ˚ — 200 V =10V CE 160 120 25˚C Ta=75˚C ...