2SD1418 Hitachi Semiconductor, 2SD1418 Datasheet
2SD1418
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2SD1418 Summary of contents
Page 1
... Application Low frequency power amplifier Complementary pair with 2SB1025 Outline UPAK 3 2SD1418 Silicon NPN Epitaxial Base 2. Collector 3. Emitter 4. Collector (Flange) ...
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... Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Notes: 1. The 2SD1418 is grouped Pulse test Mark 120 100 to 200 FE1 2 Symbol ...
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... Base to Emitter Voltage V BE 1.0 0.8 0.6 0.4 0.2 0 150 Collector to Emitter Voltage V DC Current Transfer Ratio vs. Collector Current 300 250 200 150 100 (V) 2SD1418 Typical Output Characteristics 0 ( 100 300 1,000 ...
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... Gain Bandwidth Product vs. Collector Current 240 Pulse 200 160 120 100 Collector Current I 4 Saturation Voltage vs. Collector Current 1 Pulse 1.0 0.8 0.6 0.4 0.2 V CE(sat Collector Current I 200 100 300 1,000 (mA) C 100 300 1,000 (mA) C Collector Output Capacitance vs ...
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Max 1 0.53 Max 0.48 Max 1.5 1.5 3.0 1.5 0.1 0.44 Max 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm (1.5) UPAK — Conforms 0.050 g ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...