MC74HC244ADWR2 ON Semiconductor, MC74HC244ADWR2 Datasheet - Page 3

• Manufacturer Part Number: MC74HC244ADWR2
• Description: IC BUFF/DVR TRI-ST DUAL 20SOIC
• Manufacturer: ON Semiconductor
• Series: 74HCr

Specifications of MC74HC244ADWR2

• Logic Type: Buffer/Line Driver, Non-Inverting
• Number Of Elements: 2
• Number Of Bits Per Element: 4
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MC74HC244ADWROSCT

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
V
Symbol
in
V
V
V
V
T
t
I
I
I
V
V
P
V
I
T
, V
T
r
I
out
CC
OK
CC
out
stg
CC
, t
OH
IK
in
IH
in
D
A
IL
L
f
out
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
Input Clamp Current (V
Output Clamp Current (V
Power Dissipation in Still Air, Plastic DIP†
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
Package)
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time
Minimum High−Level Input Voltage
Maximum Low−Level Input Voltage
Minimum High−Level Output
Voltage
(Figure 1)
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
SOIC Package†
TSSOP Package†
(Plastic DIP, SOIC, SSOP or TSSOP
V
CC
Parameter
= 6.0 V
V
Parameter
Parameter
CC
CC
I
< 0 or V
O
and GND Pins
= 4.5 V
< 0 or V
V
CC
I
> V
(Voltages Referenced to GND)
O
= 2.0 V
CC
> V
V
|I
V
|I
V
|I
V
out
out
out
out
out
in
in
)
CC
= V
= V
| v 20 mA
| v 20 mA
| v 20 mA
= V
= 0.1 V
)
IH
IH
CC
Test Conditions
http://onsemi.com
|I
|I
|I
– 0.1 V
out
out
out
| v 2.4 mA
| v 6.0 mA
| v 7.8 mA
– 0.5 to V
– 0.5 to V
– 55
Min
2.0
3
0
0
0
0
– 0.5 to + 7.0
– 65 to + 150
Value
± 20
± 35
± 75
± 20
± 20
750
500
450
260
+ 125
1000
CC
CC
Max
V
500
400
6.0
CC
+ 0.5
+ 0.5
Unit
_C
ns
V
V
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
Unit
mW
V
mA
mA
mA
mA
mA
CC
_C
_C
V
V
V
– 55 to
25_C
3.15
1.35
2.48
3.98
5.48
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
V
range GND v (V
tied to an appropriate logic voltage
level (e.g., either GND or V
Unused outputs must be left open.
out
This device contains protection
Unused inputs must always be
Guaranteed Limit
should be constrained to the
v 85_C
3.15
1.35
2.34
3.84
5.34
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
in
v 125_C
or V
3.15
1.35
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
2.2
3.7
5.2
out
) v V
in
CC
CC
and
Unit
V
V
V
.
).