2SD2185 Panasonic Semiconductor, 2SD2185 Datasheet
2SD2185
Manufacturer Part Number
2SD2185
Description
Silicon NPN epitaxial planer type(For low-frequency output amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD2185.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD2185
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD2185(U)-R(TX)
Manufacturer:
NS
Quantity:
440
Part Number:
2SD2185(U)-R(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SD2185-R
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD2185-S
Manufacturer:
PANA
Quantity:
1 689
Part Number:
2SD2185-S
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD2185OSL
Manufacturer:
ROHM
Quantity:
572
Transistor
2SD2185
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1440
*
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
h
FE1
Features
Low collector to emitter saturation voltage V
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE1
120 ~ 240
Symbol
1HR
V
V
V
I
I
P
T
T
CP
C
R
C
j
stg
CBO
CEO
EBO
*
I
V
V
V
h
h
V
V
f
C
CBO
T
FE1
FE2
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
BE(sat)
ob
*1
(Ta=25˚C)
170 ~ 340
–55 ~ +150
1HS
2
Ratings
or more, and the board
S
150
50
50
5
4
3
1
V
I
I
I
V
V
I
I
V
V
CE(sat)
C
C
E
C
C
CB
CB
CE
CE
CB
= 10 A, I
= 1mA, I
= 10 A, I
= 1A, I
= 1A, I
= 10V, I
= 2V, I
= 2V, I
= 20V, I
= 10V, I
.
B
B
C
C
= 50mA
= 50mA
B
Unit
C
Conditions
E
E
˚C
˚C
E
E
W
V
V
V
A
A
= 200mA
= 1.0A
= 0
= –50mA, f = 200MHz
= 0
= 0
= 0
= 0, f = 1MHZ
Marking symbol :
1:Base
2:Collector
3:Emitter
0.4 0.08
0.5 0.08
1.5 0.1
45
min
120
3
50
50
80
5
3.0 0.15
4.5 0.1
1.6 0.2
2
EIAJ:SC–62
Mini Power Type Package
marking
0.15
0.82
110
1H
1
typ
23
*2
Pulse measurement
max
340
0.1
0.3
1.2
35
1.5 0.1
0.4 0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
V
A
1
Related parts for 2SD2185
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon MOS FETs
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Low-Frequency Amplification
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
2SD2185 Summary of contents
Page 1
... Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1440 Features Low collector to emitter saturation voltage V Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. Absolute Maximum Ratings ...
Page 2
... V ) Collector to emitter voltage — 300 V =2V CE 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 0.01 0.03 0.1 0 Collector current I C 2SD2185 V — I CE(sat = Ta=75˚C 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0 Collector current — ...