2SD2413 Panasonic Semiconductor, 2SD2413 Datasheet
2SD2413
Manufacturer Part Number
2SD2413
Description
Silicon NPN triple diffusion planer type(For low-frequency output amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD2413.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD2413
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD2413G0L
Manufacturer:
Panasonic - SSG
Quantity:
1 990
Transistor
2SD2413
Silicon NPN triple diffusion planer type
For low-frequency output amplification
*
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Features
High collector to base voltage V
High collector to emitter voltage V
Large collector power dissipation P
Low collector to emitter saturation voltage V
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
Symbol
V
V
V
I
I
P
T
T
CP
C
C
j
stg
CBO
CEO
EBO
*
V
V
V
h
V
V
f
C
T
FE
(Ta=25˚C)
Symbol
CBO
CBO
CEO
EBO
CE(sat)
BE(sat)
ob
CEO
(Ta=25˚C)
C
.
.
–55 ~ +150
.
2
Ratings
or more, and the board
400
400
200
100
150
5
1
I
I
I
V
I
I
V
V
CE(sat)
C
C
E
C
C
CB
CE
CB
= 100 A, I
= 500 A, I
= 100 A, I
= 50mA, I
= 50mA, I
= 30V, I
= 5V, I
= 30V, I
.
C
Unit
mA
mA
Conditions
E
˚C
˚C
E
W
B
B
V
V
V
C
= 30mA
E
B
= –20mA, f = 200MHz
= 0, f = 1MHz
= 5mA
= 5mA
= 0
= 0
= 0
Marking symbol :
1:Base
2:Collector
3:Emitter
0.4 0.08
0.5 0.08
1.5 0.1
45
min
400
400
30
3
5
3.0 0.15
4.5 0.1
1.6 0.2
EIAJ:SC–62
Mini Power Type Package
2
marking
1S
typ
40
1
max
1.5
1.5
7
1.5 0.1
0.4 0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
V
1
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2SD2413 Summary of contents
Page 1
... Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Features High collector to base voltage V High collector to emitter voltage V Large collector power dissipation P Low collector to emitter saturation voltage V Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing ...
Page 2
... V ) Collector to emitter voltage — 180 V =5V CE 150 120 90 25˚C Ta=75˚C 60 –25˚ 0.1 0 100 ( mA ) Collector current I C 2SD2413 V — I CE(sat) C 100 Ta=75˚C 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.1 0 100 ( mA ) Collector current — ...