2SD2623 Panasonic Semiconductor, 2SD2623 Datasheet
2SD2623
Manufacturer Part Number
2SD2623
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD2623.pdf
(3 pages)
www.DataSheet4U.com
Transistors
2SD2623
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• Low ON resistance R
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistanse
automatic insertion through the tape packing.
2. * 1: Pulse measurement
* 2: Rank classification
Parameter
Rank
Parameter
* 3
h
FE
on
200 to 350
* 1, 2
* 1
R
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
I
T
V
V
V
CBO
CEO
EBO
a
CP
I
C
stg
CE(sat)
BE(sat)
C
R
C
h
300 to 500
CBO
j
f
CBO
CEO
EBO
= 25°C
FE
T
ob
on
S
−55 to +150
Rating
I
I
I
V
V
I
I
V
V
C
C
E
C
C
150
150
CB
0.5
CB
CE
CB
25
20
12
= 10 µA, I
= 10 µA, I
= 1 mA, I
= 0.5 A, I
= 0.5 A, I
1
SJC00284BED
= 2 V, I
= 10 V, I
= 25 V, I
= 10 V, I
400 to 800
B
B
B
C
T
C
E
Conditions
E
Unit
mW
E
E
= 0
= 20 mA
= 50 mA
= 0.5 A
°C
°C
V
V
V
A
A
= 0
= 0
= −50 mA, f = 200 MHz
= 0
= 0, f = 1 MHz
Marking Symbol: 2V
* 3: R
10˚
0.3
on
(0.65) (0.65)
I
+0.1
–0.0
B
1
Measuremet circuit
= 1 mA
3
1.3
2.0
R
on
±0.1
±0.2
=
Min
200
25
20
12
2
V
V
A
B
− V
B
V
0.14
× 1 000 (Ω)
Typ
200
1.0
B
10
1 kΩ
V
V
SMini3-G1 Package
V
Max
A
0.40
100
800
1.2
0.15
1 : Base
2 : Emitter
3 : Collector
EIAJ: SC-70
f = 1 kHz
V = 0.3 V
+0.10
–0.05
Unit: mm
MHz
Unit
nA
pF
V
V
V
V
V
Ω
1
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2SD2623 Summary of contents
Page 1
... Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • Low ON resistance R on • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) ...
Page 2
... 160 120 120 ( °C ) Ambient temperature T a BE(sat −25° 25°C a 75°C 0.1 0. (µ Collector current I C www.DataSheet4U.com 2 4 0.8 3.5 mA 3.0 mA 2.5 mA 0.6 0.4 0.2 0 160 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...