2SD875 Panasonic Semiconductor, 2SD875 Datasheet
2SD875
Manufacturer Part Number
2SD875
Description
Silicon PNP epitaxial planer type(For low-frequency output amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD875.pdf
(2 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
2SD875
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD875-R
Manufacturer:
ROHM
Quantity:
24 000
Part Number:
2SD875-R
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SD875-S
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistor
2SD875
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB767
*
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
h
FE1
Features
Large collector power dissipation P
High collector to emitter voltage V
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE1
130 ~ 220
Symbol
V
V
V
I
I
P
T
T
XR
CP
C
R
C
j
stg
CBO
CEO
EBO
*
I
V
V
V
h
h
V
V
f
C
CBO
T
FE1
FE2
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
BE(sat)
ob
*1
CEO
(Ta=25˚C)
C
185 ~ 330
.
–55 ~ +150
.
2
Ratings
XS
or more, and the board
S
150
0.5
80
80
5
1
1
V
I
I
I
V
V
I
I
V
V
C
C
E
C
C
CB
CB
CE
CE
CB
= 10 A, I
= 100 A, I
= 10 A, I
= 300mA, I
= 300mA, I
= 10V, I
= 10V, I
= 5V, I
= 20V, I
= 10V, I
C
Unit
C
Conditions
E
E
C
˚C
˚C
E
E
W
V
V
V
A
A
= 500mA
B
= –50mA
= 0
= 0
B
B
= 0
= 150mA
= 0, f = 1MHz
= 0
= 30mA
= 30mA
*2
*2
*2
*2
*2
, f = 200MHz
Marking symbol :
1:Base
2:Collector
3:Emitter
0.4 0.08
0.5 0.08
1.5 0.1
45
min
130
3
80
80
50
5
3.0 0.15
4.5 0.1
1.6 0.2
2
EIAJ:SC–62
Mini Power Type Package
marking
0.85
100
120
X
1
typ
0.2
11
*2
Pulse measurement
max
330
0.1
0.4
1.2
1.5 0.1
0.4 0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
V
A
1
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2SD875 Summary of contents
Page 1
... Transistor 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB767 Features Large collector power dissipation P High collector to emitter voltage V Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. ...
Page 2
... Area of safe operation (ASO) 10 Single pulse T =25˚ t=1s 0.3 DC 0.1 0.03 0.01 0.003 0.001 0.1 0 100 ( V ) Collector to emitter voltage V CE 2SD875 V — I CE(sat = 0.3 Ta=75˚C 0.1 25˚C –25˚C 0.03 0.01 0.003 0.001 100 300 1000 ( mA ) Collector current I ...