BC807-25W Siemens Semiconductor Group, BC807-25W Datasheet - Page 2

• Manufacturer Part Number: BC807-25W
• Description: PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
• Manufacturer: Siemens Semiconductor Group

1) Pulse test: t < 300 s; D < 2%
Semiconductor Group
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Base-emitter breakdown voltage
I
Collector-base cutoff current
V
V
Emitter cutoff current
V
DC current gain
I
I
I
I
I
I
Collector-emitter saturation voltage 1)
I
Base-emitter saturation voltage 1)
I
C
C
C
C
E
C
C
C
C
C
C
C
C
CB
CB
EB
= 10 µA, I
= 10 µA, I
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 100 mA, V
= 100 mA, V
= 100 mA, V
= 300 mA, V
= 300 mA, V
= 300 mA, V
= 500 mA, I
= 500 mA, I
= 4 V, I
= 25 V, T
= 25 V, T
C
B
B
C
B
B
= 0
A
A
= 0 , BC 807 W
= 0 , BC 808 W
= 0
B
B
= 0 , BC 807 W
= 0 , BC 808 W
CE
CE
CE
CE
CE
CE
= 25 °C
= 150 °C
= 50 mA
= 50 mA
= 1 V, BC ... 16 W
= 1 V, BC ... 25 W
= 1 V, BC ... 40 W
= 1 V, BC ... 16 W
= 1 V, BC ... 25 W
= 1 V, BC ... 40 W
A
=25°C, unless otherwise specified
2
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
min.
-
-
-
-
-
45
25
50
30
5
100
160
250
60
100
170
Values
typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
160
250
350
max.
-
-
-
-
-
-
-
-
100
50
100
250
400
630
0.7
1.2
BC 807-16W
Dec-19-1996
Unit
V
nA
µA
nA
-
V