BC856-BC860 Siemens Semiconductor Group, BC856-BC860 Datasheet - Page 3
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BC856-BC860
Manufacturer Part Number
BC856-BC860
Description
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BC856-BC860.pdf
(8 pages)
Electrical Characteristics
at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-emitter breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
V
DC current gain
I
I
Collector-emitter saturation voltage
I
I
Base-emitter saturation voltage
I
I
Base-emitter voltage
I
I
1)
Semiconductor Group
C
C
C
E
C
C
C
C
C
C
C
C
Pulse test: t 300 s, D = 2 %.
CB
CB
= 10 mA
= 10 A
= 10 A, V
= 1 A
= 10 A, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
A
= 30 V
= 30 V, T
= 25 ˚C, unless otherwise specified.
CE
BE
CE
A
CE
B
B
CE
B
B
= 150 ˚C
= 5 V
= 0.5 mA
= 0.5 mA
= 0
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
= 5 V
= 5 V
= 5 mA
= 5 mA
= 5 V
BC 856
BC 857, BC 860
BC 858, BC 859
BC 856
BC 857, BC 860
BC 858, BC 859
BC 856
BC 857, BC 860
BC 858, BC 859
1)
1)
3
Symbol
V
V
V
V
I
h
V
V
V
CB0
FE
(BR)CE0
(BR)CB0
(BR)CES
(BR)EB0
CEsat
BEsat
BE(on)
min.
65
45
30
80
50
30
80
50
30
5
–
–
–
–
–
125
220
420
–
–
–
–
600
–
Values
typ.
–
–
–
–
–
–
–
–
–
–
1
–
140
250
480
180
290
520
75
250
700
850
650
–
BC 856 ... BC 860
max.
–
–
–
–
–
–
–
–
–
–
15
4
–
–
–
250
475
800
300
650
–
–
750
820
Unit
V
nA
–
mV
A