BC857BS Philips Semiconductors, BC857BS Datasheet - Page 3

• Manufacturer Part Number: BC857BS
• Description: PNP general purpose double transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 26
Per device
R
Per transistor
I
I
h
V
V
V
C
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BE
th j-a
c
e
PNP general purpose double transistor
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
p
300 s;
PARAMETER
0.02.
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
C
= 0; V
= 0; V
= i
= 0; V
= 2 mA; V
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 2 mA; V
= i
= 10 mA; V
e
c
= 0; V
= 0; V
CB
CB
EB
3
= 30 V
= 30 V; T
= 5 V
CONDITIONS
CB
EB
CE
CE
B
B
CE
= 500 mV; f = 1 MHz
B
= 10 V; f = 1 MHz
= 0.5 mA
= 0.5 mA
note 1
= 5 V
= 5 V
= 5 mA; note 1
= 5 V; f = 100 MHz 100
CONDITIONS
j
= 150 C
200
MIN.
600
VALUE
416
10
TYP.
755
655
Product specification
BC857BS
450
2.2
MAX. UNIT
15
5
100
100
400
750
UNIT
K/W
mV
pF
MHz
nA
nA
mV
mV
mV
pF
A