2SB1176 Panasonic Semiconductor, 2SB1176 Datasheet - Page 2

• Manufacturer Part Number: 2SB1176
• Description: Silicon PNP epitaxial planar type
• Manufacturer: Panasonic Semiconductor

2SB1176
2
− 0.01
−100
− 0.1
−10
10
10
10
20
15
10
−1
− 0.01
10
5
0
− 0.1
1
4
3
2
0
Collector-base voltage V
Ambient temperature T
Collector current I
40
25˚C
V
− 0.1
C
−1
BE(sat)
P
ob
C
(2)
 V
 T
(1)T
(2)Without heat sink
80
T
C
(P
(1)
100˚C
=–25˚C
 I
C
C
=Ta
=1.3W)
CB
a
−10
−1
C
C
120
I
f=1MHz
T
a
( A )
E
CB
C
=0
I
( °C )
=25˚C
C
/I
B
( V )
=20
−100
160
−10
0.01
100
10
10
10
0.1
−8
−7
−6
−5
−4
−3
−2
−1
10
10
− 0.01
0
1
1
4
3
2
0
0
Collector-emitter voltage V
Collector current I
Collector current I
−2
T
SJD00052AED
− 0.8
C
t
=100˚C
on
− 0.1
–25˚C
I
, t
h
C
−4
FE
stg
I
 V
B
=–120mA
−1.6
 I
, t
f
25˚C
−6
Pulsed t
Duty cycle=1%
I
(–I
V
T
 I
CE
C
C
CC
C
/I
=25˚C
B1
−1
–100mA
B
=–50V
=10
=I
C
C
−2.4
–80mA
V
C
B2
T
w
(A)
( A )
–60mA
−8
CE
C
=1ms
)
–10mA
–3mA
–30mA
–20mA
CE
=25˚C
–40mA
=–2V
( V )
t
t
t
stg
on
f
−3.2
−10
−10
− 0.01
− 0.01
−100
− 0.1
−100
− 0.1
−10
10
10
10
−10
10
−1
− 0.01
−1
− 0.01
1
4
3
2
−1
Collector-emitter voltage V
I
I
CP
C
Collector current I
Safe operation area
t=300ms
Collector current I
V
− 0.1
− 0.1
−10
CE(sat)
f
T
T
C
=100˚C
 I
Non repetitive pulse
T
C
t=1ms
 I
=25˚C
–25˚C
25˚C
C
−100
−1
−1
t=10ms
C
C
C
V
f=10MHz
T
C
CE
( A )
( A )
=25˚C
I
=–10V
CE
C
/I
B
=20
( V )
−1 000
−10
−10