2SB166040ML Silan Microelectronics Joint-stock, 2SB166040ML Datasheet

2SB166040ML

Manufacturer Part Number

2SB166040ML

Description

SCHOTTKY BARRIER DIODE CHIPS

Manufacturer

Silan Microelectronics Joint-stock

Datasheet

1.2SB166040ML.pdf (1 pages)

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2SB166040ML SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS (T

Reverse Voltage

Forward Voltage

Reverse Current

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

Maximum Repetitive Peak Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

2SB166040ML is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

Low power losses, high efficiency;

Guard ring construction for transient protection;

High ESD capability;

High surge capability;

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits.;

Chip Size:1660 m X 1660 m;

Chip Thickness: 280±20 m;

Parameters

Symbol

amb

=25 C)

Symbol

FSM

FAV

RRM

STG

Test Conditions

ORDERING SPECIFICATIONS

=0.5mA

2SB166040MLYY

=60V

=5A

Product Name

Chip Topography and Dimensions

La: Chip Size: 1660 m;

Lb: Pad Size: 1565 m;

Ratings

-40~125

150

125

Min.

For axial leads package

REV:1.0

2SB166040ML

Specification

Max.

0.70

0.5

www.DataSheet4U.com

Page 1 of 1

2007.04.27

Unit

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