MC100EP32 ON Semiconductor, MC100EP32 Datasheet - Page 6

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MC100EP32

Manufacturer Part Number
MC100EP32
Description
3.3V 5V ECL / 2 Divider
Manufacturer
ON Semiconductor
Datasheet

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NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
17. Input and output parameters vary 1:1 with V
18. All loading with 50 W to V
19. V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
20. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
Table 10. 100EP DC CHARACTERISTICS, NECL
Symbol
Table 11. AC CHARACTERISTICS
Symbol
I
V
V
V
V
V
V
I
I
V
t
t
t
t
t
V
t
t
EE
IH
IL
PLH
PHL
RR
PW
JITTER
r
f
OH
OL
IH
IL
BB
IHCMR
OPP
PP
input signal.
IHCMR
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
Power Supply Current
Output HIGH Voltage (Note 18)
Output LOW Voltage (Note 18)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Output Voltage Reference
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 19)
Input HIGH Current
Input LOW Current
Output Voltage Amplitude
(See Figure 3)
Propagation Delay to
Output Differential
10 Series
100 Series
Set/Reset Recovery
Minimum Pulse width
CLOCK Random Jitter (RMS)
Input Voltage Swing
(Differential Configuration)
Output Rise/Fall Times
(20% − 80%)
Characteristic
Characteristic
CC
EE
− 2.0 V.
, V
IHCMR
f
RESET to Q, Q
RESET to Q, Q
in
f
@ v4.0 GHz
in
f
f
V
CLK to Q, Q
in
in
@ 4.0 GHz
max varies 1:1 with V
CC
< 3.5 GHz
< 3.5 GHz
= 0 V; V
RESET
CC
Q, Q
.
MC10EP32, MC100EP32
−1945
−1225
−1945
−1525
EE
−1145
Min
0.5
23
= −3.0 V to −5.5 V or V
Min
640
250
220
320
200
550
150
V
50
http://onsemi.com
V
EE
CC
+2.0
−1020
−1820
−1425
= 0 V; V
−40 C
CC
Typ
−40 C
30
Typ
. The V
700
740
330
290
400
175
475
800
100
0.5
0.5
6
EE
−1695
−1625
−1325
−895
−880
Max
IHCMR
150
0.0
37
= −5.5 V to −3.0 V (Note 17)
1200
Max
420
390
480
150
1.5
range is referenced to the most positive side of the differential
−1945
−1225
−1945
−1525
−1145
CC
Min
0.5
26
Min
630
270
250
320
200
550
150
70
V
= 3.0 V to 5.5 V; V
EE
+2.0
−1020
−1820
−1425
25 C
Typ
25 C
34
Typ
700
710
350
300
400
175
475
800
120
0.5
0.5
CC
− 2.0 V.
−1695
−1625
−1325
−895
−880
Max
150
0.0
1200
40
Max
450
390
480
170
1.5
EE
= 0 V (Note 20)
−1945
−1225
−1945
−1525
−1145
Min
0.5
Min
28
500
320
320
375
200
550
150
70
V
EE
+2.0
−1020
−1820
−1425
85 C
85 C
Typ
Typ
700
600
400
380
450
175
475
800
130
36
0.5
0.5
−1695
−1625
−1325
−895
−880
1200
Max
150
Max
0.0
480
460
525
200
1.5
42
Unit
Unit
mA
mV
mV
mV
mV
mV
mV
mV
mA
mA
ps
ps
ps
ps
ps
V

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