MC100EPT23 ON Semiconductor, MC100EPT23 Datasheet - Page 2

• Manufacturer Part Number: MC100EPT23
• Description: Dual Differential LVPECL to LVTTL Translator
• Manufacturer: ON Semiconductor

* Maximum Ratings are those values beyond which damage to the device may occur.
NOTE: 100EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
1. All values vary 1:1 with V CC .
2. All loading with 500 ohms to GND, CL = 20pF.
3. V IHCMR min varies 1:1 with GND, max varies 1:1 with V CC .
4. F max guaranteed for functionality only. V OL and V OH levels are guaranteed at DC only.
5. Reference (V CC = 3.3V
6. Skews are measured between outputs under identical conditions.
7. 200mV input guarantees full logic swing at the output.
DC CHARACTERISTICS (V CC = 3.3V
AC CHARACTERISTICS (V CC = 3.3V
MAXIMUM RATINGS*
I CCH
I CCL
V IH
V IL
I IH
I IL
V OH
V OL
I OS
V IHCMR Input HIGH Voltage Common Mode Range (Note 3.)
f max
t PLH ,
t PHL
t SK+ +
t SK– –
t SKPP
t JITTER
V PP
t r
t f
Symbol
Symbol
V CC
V I
I out
T A
T stg
T sol
JA
JC
Symbol
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
Maximum Toggle
Frequency (Note 4.)
Propagation Delay to
Output Differential (Note 5.)
Output–to–Output Skew++
Output–to–Output Skew– –
Part–to–Part Skew (Note 6.)
Cycle–to–Cycle Jitter
Input Voltage Swing
(Differential) (Note 7.)
Output Rise/Fall Times
(20% – 80%)
Power Supply Current (Outputs set to HIGH)
Power Supply Current (Outputs set to LOW)
Input HIGH Voltage (V CC = 3.3) (Note 1.)
Input LOW Voltage (V CC = 3.3) (Note 1.)
Input HIGH Current
Input LOW Current
Output HIGH Voltage (I OH = –3.0mA) (Note 2.)
Output LOW Voltage (I OL = 24mA) (Note 2.)
Output Short Circuit Current
Characteristic
Power Supply (GND = 0V)
Input Voltage (GND = 0V, V I not more positive than V CC )
Output Current
Operating Temperature Range
Storage Temperature
Thermal Resistance (Junction–to–Ambient)
Thermal Resistance (Junction–to–Case)
Solder Temperature (<2 to 3 Seconds: 245 C desired)
5%; GND = 0V)
Q, Q
0.3V; GND = 0V; T A = –40 C to 85 C)
0.3V; GND = 0V)
Parameter
Characteristic
Min
275
100
330
1.2
1.2
http://onsemi.com
–40 C
TBD
Typ
350
500
800
600
MC100EPT23
1.5
1.5
60
25
1200
Max
2
900
1.8
1.8
Continuous
Min
275
100
330
1.2
1.2
500lfpm
Still Air
Surge
25 C
TBD
Typ
350
500
800
600
1.5
1.5
60
25
D
D
1200
Max
900
1.8
1.8
41 to 44
–65 to +150
–40 to +85
0 to 3.8
0 to 3.8
Value
100
190
130
265
50
Min
275
100
330
2135
1490
–150
–180
1.3
1.2
Min
2.4
2.0
10
15
5%
85 C
TBD
Typ
350
500
800
650
1.7
1.5
Typ
60
25
18
26
1200
2420
1825
Max
Max
900
150
–50
2.2
1.8
0.5
0.5
3.3
25
33
VDC
VDC
Unit
mA
C/W
C/W
C
C
C
Unit
Unit
MHz
mA
mA
mV
mV
mA
mV
ns
ps
ps
ps
V
V
V
A
A