NCV8402 ON Semiconductor, NCV8402 Datasheet - Page 2
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NCV8402
Manufacturer Part Number
NCV8402
Description
Self-Protected Low Side Driver
Manufacturer
ON Semiconductor
Datasheet
1.NCV8402.pdf
(10 pages)
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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
MAXIMUM RATINGS
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
Gate−to−Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance
Single Pulse Drain−to−Source Avalanche Energy
(V
Load Dump Voltage
Operating Junction Temperature
Storage Temperature
DD
= 32 V, V
G
= 5.0 V, I
(T
PK
J
= 25°C unless otherwise noted)
= 1.0 A, L = 300 mH, R
+
−
VGS
I
(V
G
Figure 1. Voltage and Current Convention
GS
Rating
= 0 and 10 V, R
G(ext)
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
GATE
= 25 W)
http://onsemi.com
Junction−to−Tab Steady State (Note 1)
I
= 2.0 W, R
2
L
@ T
@ T
@ T
I
= 9.0 W, t
D
SOURCE
DRAIN
A
A
T
= 25°C (Note 1)
= 25°C (Note 2)
= 25°C (Note 1)
(R
G
d
= 1.0 MW)
= 400 ms)
VDS
Symbol
V
V
R
R
R
V
E
V
T
P
DGR
DSS
T
I
qJA
qJA
qJT
GS
stg
D
AS
LD
+
−
D
J
−40 to 150
−55 to 150
Value
Internally Limited
"14
150
114
1.1
1.7
8.9
42
42
72
14
87
°C/W
Unit
mJ
°C
°C
W
V
V
V
V