NCV8440 ON Semiconductor, NCV8440 Datasheet - Page 6

• Manufacturer Part Number: NCV8440
• Description: Protected Power MOSFET
• Manufacturer: ON Semiconductor

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.001
1000
500
400
300
200
100
0.01
2.00
1.75
1.50
1.25
1.00
0.75
0.50
100
0.1
10
0
10
1
−40
10
V
C
C
100°C
150°C
DS
Figure 7. Normalized R
iss
rss
V
Figure 9. Drain−to−Source Leakage Current
I
D
−20
GS
= 0 V
5
= 2 A
15
V
25°C
= 0 V
V
GS
Figure 11. Capacitance Variation
DS
T
0
0
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
20
V
V
GS
DS
20
5
= 0 V
25
V
GS
40
10
= 5 V
V
30
GS
DS(on)
60
15
= 10 V
35
80
vs. Temperature
20
TYPICAL PERFORMANCE CURVES
100
40
25
T
C
C
C
J
iss
rss
120
oss
= 25°C
30
45
http://onsemi.com
140
35
50
6
5
4
3
2
1
0
0
V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
Q
DS
8
6
4
2
0
Figure 12. Gate−to−Source Voltage vs. Total
0.5
GS
−40
150°C
−20
Figure 8. Normalized Threshold Voltage vs.
Figure 10. Source−Drain Diode Forward
1
Q
V
G
SD
, TOTAL GATE CHARGE (nC)
0.6
T
0
J
, SOURCE−TO−DRAIN VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
Gate Charge
20
Q
Q
Characteristics
GD
T
0.7
25°C
Temperature
40
3
60
0.8
80
I
T
4
D
J
I
V
100
D
= 2.6 A
−40°C
= 25°C
DS
V
= 100 mA,
GS
0.9
= V
120
GS
5
40
30
0
140
50
20
10
1