BC318 Micro Electronics, BC318 Datasheet - Page 2

• Manufacturer Part Number: BC318
• Description: NPN SILICON PLANAR EPITAXIAL TRANSISTOR
• Manufacturer: Micro Electronics

BC107/BC108
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/6
V
Pulsed: Pulse duration = 300 s, duty cycle
V
V
V
Symb ol
V
V
R
R
( BR)CEO
(BR)CBO
(BR)EBO
CE(sat )
BE(s at)
BE(on)
t hj-ca se
h
I
h
t hj- amb
CBO
FE
fe
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (I
Collector-Base
Breakdown Voltage
(IE = 0)
Collector-Emitter
Breakdown Voltage
(I
Emitter-Base
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter O n
Voltage
DC Current G ain
Small Signal Current
Gain
B
C
= 0)
= 0)
Parameter
E
= 0)
1 %
for BC107
V
V
for BC108
V
V
I
for BC107
for BC108
I
for BC107
for BC108
I
for BC107
for BC108
I
I
I
I
I
I
I
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
I
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
I
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
I
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CB
CB
CB
= 10 A
= 10 A
= 10 mA
= 10 mA
= 100 mA
= 10 mA
= 100 mA
= 2 mA
= 10 mA
= 2 mA
= 10 A
= 2 mA
= 10 mA V
= 40 V
= 40 V
= 20 V
= 20 V
case
= 25
Test Cond ition s
V
CE
o
CE
I
I
I
I
V
T
T
V
V
V
C unless otherwise specified)
B
B
B
B
ca s e
ca s e
CE
CE
CE
CE
= 10 V f = 100 MHz
= 5 mA
= 5 mA
= 0.5 mA
= 0.5 mA
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 150
= 150
o
o
f = 1KHz
C
C
Max
Max
Min.
550
110
110
200
110
110
200
420
100
50
30
45
20
40
40
6
5
Typ .
200
500
200
750
950
650
700
120
150
120
150
270
250
190
300
370
190
300
500
70
90
90
2
Max.
250
600
700
770
450
220
450
800
220
450
800
15
15
15
15
o
o
Un it
mV
mV
mV
mV
mV
mV
C/W
C/W
nA
V
V
V
V
V
V
A
A
A