KSC5305 Fairchild Semiconductor, KSC5305 Datasheet
KSC5305
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KSC5305 Summary of contents
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... BP P Power Dissipation Junction Temperature J T Storage Temperature STG Thermal Characteristics Symbol R Thermal Resistance ©2001 Fairchild Semiconductor Corporation KSC5305D B T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Characteristics Junction to Case Junction to Ambient Equivalent Circuit C TO-220 1 1 ...
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... Fall Time F t Storage Time STG t Fall Time F V Diode Forward Voltage Reverse recovery time rr (di/dt = 10A/ s) *Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10% ©2001 Fairchild Semiconductor Corporation T =25 C unless otherwise noted C Test Condition I =1mA =5mA =1mA, I ...
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... 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. DC current Gain 125 a 0.1 o -20 C 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Collector-Emitter Saturation Voltage ©2001 Fairchild Semiconductor Corporation 100 I = 500mA 450mA 400mA 350mA 300mA 250mA 200mA 150mA 100mA ...
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... COLLECTOR CURRENT C Figure 7. Switching Time 1.6 1.4 1.2 1.0 0.8 1.0 I [A], FORWARD CURRENT f Figure 9. Reverse Recovery Time 100 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 11. Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 1000 V = 300V -2. 100 Figure 8. Collector Output Capacitance 10 1 0.1 1.5 2.0 ...
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... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...