KSC5504D Fairchild Semiconductor, KSC5504D Datasheet

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KSC5504D

Manufacturer Part Number
KSC5504D
Description
High Voltage High Speed Power Switch Application
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
High Voltage High Speed Power Switch
Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : D2-PAK or TO-220
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
* Pulse Test : Pulse Width = 5ms, Duty Cycle
Thermal Characteristics
R
R
T
V
V
V
I
I
I
I
P
T
T
E
C
CP
B
BP
L
J
STG
CBO
EBO
C
AS
Symbol
jc
ja
CEO
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation (T
Junction Temperature
Storage Temperature
Avalanche Energy(T
Thermal Resistance
Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds
10%
KSC5504D/KSC5504DT
j
=25 C)
T
C
C
=25 C)
=25 C unless otherwise noted
Parameter
T
C
Characteristics
=25 C unless otherwise noted
Junction to Case
Junction to Ambient
B
Equivalent Circuit
C
E
1.Base
- 65 ~ 150
Value
1200
600
150
75
12
4
8
2
4
3
Rating
1.65
62.5
270
D2-PAK
1
2.Collector
TO-220
1
3.Emitter
Rev. A1, June 2001
Units
Unit
C/W
mJ
W
C
V
V
V
A
A
A
A
C
C

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KSC5504D Summary of contents

Page 1

... Pulse Test : Pulse Width = 5ms, Duty Cycle Thermal Characteristics Symbol R Thermal Resistance Maximun Lead Temperature for Soldering Purpose L : 1/8” from Case for 5 seconds ©2001 Fairchild Semiconductor Corporation KSC5504D/KSC5504DT T =25 C unless otherwise noted C Parameter = = 10% T =25 C unless otherwise noted C ...

Page 2

... Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE C Input Capacitance ib C Output Capacitance ob f Current Gain Bandwidth Product T V Diode Forward Voltage F ©2001 Fairchild Semiconductor Corporation T =25 C unless otherwise noted C Test Condition I =1mA =5mA =500 ...

Page 3

... Fall Time F INDUCTIVE LOAD SWITCHING (V t Storage Time STG t Fall Time F t Cross-over Time C t Storage Time STG t Fall Time F t Cross-over Time C ©2001 Fairchild Semiconductor Corporation T =25 C unless otherwise noted C Test Condition I = =1A =100mA B1 V =300V ...

Page 4

... 1.0 0.5 0.0 1E-3 0.01 0 Figure 5. Typical Collector Saturation Voltage ©2001 Fairchild Semiconductor Corporation 1 100 ...

Page 5

... 500 100 0 Figure 11. Inductive Switching Time, t ©2001 Fairchild Semiconductor Corporation (Continued 0 100 0.5 Figure 10. Inductive Switching Time, t ...

Page 6

... Figure 15. Inductive Switching Time 125 0 Figure 17. Resistive Switching Time, t ©2001 Fairchild Semiconductor Corporation (Continued) 500 100 50 0.5 3 Figure 14. Inductive Switching Time 500 ...

Page 7

... C 800 600 400 200 Figure 23. Inductive Switching Time, t ©2001 Fairchild Semiconductor Corporation (Continued 0.5 Figure 20. Resistive Switching Time ...

Page 8

... Typical Characteristics 100 0.1 0.01 10 100 LLE Figure 25. Forward Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 100 50us 1000 0 25 Figure 26 ...

Page 9

... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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