DT28F016SV-080 Intel Corporation, DT28F016SV-080 Datasheet - Page 53

• Manufacturer Part Number: DT28F016SV-080
• Description: 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
• Manufacturer: Intel Corporation

ADDRESSES (A)
ADDRESSES (A)
WE# (W)
OE# (G)
CEx#(E)
NOTE 4
DATA (D/Q)
RY/BY# (R)
RP# (P)
NOTES:
1. This address string depicts data program/erase cycles with corresponding verification via ESRD.
2. This address string depicts data program/erase cycles with corresponding verification via CSRD.
3. This cycle is invalid when using CSRD for verification during data program/erase operations.
4. CE
5. RP# low transition is only to show t
6. V
7. V
NOTE 1
NOTE 2
V
PP
(V)
PP
PP
V
V
POWER-DOWN
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
X
OL
PPH2
PPH1
IH
IH
IH
IH
IH
IH
IH
PPLK
IL
IL
IL
IL
IL
IL
IL
IL
# is defined as the latter of CE
voltage during program/erase operations valid at both 12V and 5V .
voltage equal to or below V
DEEP
HIGH Z
t
t
WLEL
PHEL
t
t
ELEH
DVEH
ERASE SETUP COMMAND
WRITE DATA-WRITE OR
NOTE 7
Figure 16. Alternate AC Waveforms for Command Write Operations
t
t
AVAV
AVAV
D
IN
t
t
EHWH
t
EHDX
EHEL
ERASE CONFIRM COMMAND
PPLK
& DATA (DATA-WRITE) OR
WRITE VALID ADDRESS
t
t
0
AVEH
AVEH
RHPL
# or CE
provides complete flash memory array protection.
A
A
IN
IN
; not valid for above read and write cycles.
D
IN
t
t
VPEH1
VPEH2
1
# going low or the first of CE
t
t
AUTOMATED DATA-WRITE
EHAX
EHAX
t
OR ERASE DELAY
EHRL
t
EHQV1,2
NOTE 6
WRITE READ EXTENDED
REGISTER COMMAND
NOTE 3
0
# or CE
D
IN
28F016SV FlashFile™ MEMORY
t
EHGL
1
# going high.
STATUS REGISTER DATA
STATUS REGISTER DATA
t
READ COMPATIBLE
RHPL
READ EXTENDED
A=RA
D
OUT
t
QVVL1
NOTE 5
t
t
QVVL2
GHEL
D
IN
0528_16
53