DT28F016SV-080 Intel Corporation, DT28F016SV-080 Datasheet - Page 17

• Manufacturer Part Number: DT28F016SV-080
• Description: 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
• Manufacturer: Intel Corporation

E
4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS
4.1 Bus Operations for Word-Wide Mode (BYTE# = V
4.2 Bus Operations for Byte-Wide Mode (BYTE# = V
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
Read
Output Disable
Standby
Deep Power-Down
Manufacturer ID
Device ID
Write
Read
Output Disable
Standby
Deep Power-Down
Manufacturer ID
Device ID
Write
RY/BY# output is open drain. When the WSM is ready, Erase is suspended or the device is in deep power-down mode.
RY/BY# will be at V
is in progress.
RP# at GND ± 0.2V ensures the lowest deep power-down current.
A
codes in x8 and x16 modes respectively. All other addresses are set to zero.
Commands for erase, data program, or lock-block operations can only be completed successfully when V
V
While the WSM is running, RY/BY# in level-mode (default) stays at V
V
RY/BY# may be at V
program operation).
The 28F016SV shares an identical device identifier (66A0H in word-wide mode, A0H in byte-wide mode) with the
28F016SA. See application note AP-393 28F016SV Compatibility with 28F016SA for software and hardware techniques to
differentiate between the 28F016SV and 28F016SA.
X can be V
0
PP
OH
and A
= V
when the WSM is not busy or in erase suspend mode.
Mode
Mode
PPH2
1
at V
IH
.
or V
IL
provide device manufacturer codes in x8 and x16 modes respectively. A
IL
OH
for address or control pins except for RY/BY#, which is either V
OL
if it is tied to V
while the WSM is busy performing various operations (for example, a Status Register read during a
Notes
Notes
1,2,7
1,6,7
1,6,7
1,5,6
1,2,7
1,6,7
1,6,7
1,5,6
1,3
4,8
1,3
4,8
4
4
CC
RP#
RP#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
through a resistor. RY/BY# at V
IH
IH
IH
IL
IH
IH
IH
IH
IH
IH
IL
IH
IH
IH
CE
CE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
X
X
IH
IH
IL
IL
IL
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
IL
1
1
#
#
CE
CE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
X
X
IL
IL
IH
IL
IH
IL
IL
IL
IL
IL
IH
IL
IH
IL
IL
IL
0
0
#
#
OE#
OE#
OL
V
V
V
V
V
V
V
V
V
V
X
X
X
X
IH
IH
IL
IH
IL
IL
IH
IL
IL
IL
OH
until all operations are complete. RY/BY# goes to
is independent of OE# while a WSM operation
IL
IH
28F016SV FlashFile™ MEMORY
)
WE#
WE#
V
V
V
V
V
V
V
V
V
V
)
X
X
X
X
IH
IH
IH
IH
IL
IH
IH
IH
IH
IL
OL
or V
0
V
V
V
V
A
A
and A
OH
X
X
X
X
X
X
X
X
X
X
IH
IH
IL
IL
1
0
.
1
at V
DQ
66A0H
High Z
High Z
High Z
0089H
High Z
High Z
High Z
DQ
D
D
A0H
89H
D
D
IH
OUT
OUT
0–15
IN
IN
0–7
provide device ID
PP
= V
RY/BY#
RY/BY#
PPH1
V
V
V
V
V
V
X
X
X
X
X
X
X
X
OH
OH
OH
OH
OH
OH
or
17