2SC3904 Panasonic Semiconductor, 2SC3904 Datasheet
2SC3904
Manufacturer Part Number
2SC3904
Description
Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SC3904.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC3904-TX
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistor
2SC3904
Silicon NPN epitaxial planer type
For 2GHz band low-noise amplification
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Features
High transition frequency f
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
Symbol
V
V
V
I
P
T
T
C
T
C
j
stg
CBO
CEO
EBO
.
I
I
h
f
C
| S
GUM
NF
CBO
EBO
T
FE
(Ta=25˚C)
Symbol
ob
21e
(Ta=25˚C)
|
2
–55 ~ +150
Ratings
200
150
15
10
65
2
V
V
V
V
V
V
V
V
CB
EB
CE
CE
CB
CE
CE
CE
= 1V, I
= 8V, I
= 8V, I
= 8V, I
= 8V, I
= 8V, I
= 10V, I
= 10V, I
C
C
C
C
C
C
Unit
mW
mA
Conditions
˚C
˚C
E
E
V
V
V
= 0
= 20mA
= 20mA, f = 0.8GHz
= 20mA, f = 1.5GHz
= 20mA, f = 1.5GHz
= 7mA, f = 1.5GHz
= 0
= 0, f = 1MHz
Marking symbol :
1:Base
2:Emitter
3:Collector
0.1 to 0.3
0.65 0.15
0.4 0.2
min
7.0
50
7
1
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
120
3S
typ
8.5
0.6
2.2
10
1.5
2.8
9
+0.2
–0.3
+0.25
–0.05
max
300
1
1
1
3
3
0.65 0.15
Unit: mm
GHz
Unit
dB
dB
dB
pF
A
A
1
Related parts for 2SC3904
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon MOS FETs
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Low-Frequency Amplification
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
2SC3904 Summary of contents
Page 1
... Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Features High transition frequency Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Parameter Symbol Collector to base voltage ...
Page 2
... Collector current I C GUM — =8V CE f=1.5GHz Ta=25˚ 0.1 0 100 ( mA ) Collector current I C 2SC3904 I — 120 V =8V CE 100 25˚C 80 Ta=75˚C –25˚ 0.2 0.4 0.6 0.8 1.0 1 Base to emitter voltage — ...