LMBT3906LT1G Leshan Radio Company, LMBT3906LT1G Datasheet - Page 5

• Manufacturer Part Number: LMBT3906LT1G
• Description: General Purpose Transistors Pnp Silicon Lmbt3906lt1g
• Manufacturer: Leshan Radio Company

1.2
1.0
0.8
0.6
0.4
0.2
0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
1.0
0
0.1
0.01
T
I
J
C
= 25°C
=1.0 mA
2.0
C , COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
0.2
0.02
5.0
0.3
0.03
10
V
BE(sat)
0.5
V
CE(sat)
0.05
20
@ I
0.7
@ I
TYPICAL STATIC CHARACTERISTICS
C
/I
0.07
B
C
=10
V
/I
1.0
50
B
BE
=10
T
@ V
Figure 14. Collector Saturation Region
0.1
J
10 mA
= +125°C
CE
100
=1.0 V
I
+25°C
2.0
–55°C
Figure 13. DC Current Gain
C
, COLLECTOR CURRENT (mA)
I
B
200
, BASE CURRENT (mA)
0.2
3.0
0.3
5.0
30 mA
– 0.5
–1.0
–1.5
–2.0
1.0
0.5
0
0
7.0
0.5
LESHAN RADIO COMPANY, LTD.
θ
VC
20
10
for V
Figure 16. Temperature Coefficients
θ
0.7
VB
40
I
for V
CE(sat)
C
1.0
, COLLECTOR CURRENT (mA)
60
20
BE(sat)
80
30
+25°C TO +125°C
100
2.0
–55°C TO +25°C
LMBT3906LT1G
120
50
3.0
+25°C TO +125°C
140
70
100 mA
–55°C TO +25°C
V
160
100
5.0
CE
T
= 1.0 V
J
180
= 25°C
7.0
5/6
200
200
10