Features
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* The 2SC5415 is classified by 30mA h
Ordering number:ENN5911
C
C
E
C
C
J
S
C
E
D
G
O
R
F
N
Marking : EA
h
u
r o
o
o
m
o
o
o t
o
m
C
e
o
FE
a
u
n
· High gain : S21e
· High cutoff frequency : f
e l l
e l l
e l l
e l l
e l l
v
s i
n i
p t
t i
a r
t t i
w
t c
C
e
e t
e
rank : E, F
B -
t u
a
c
c
t c
t c
t c
r e
s r
o i
g
r u
o t
o t
- r
d r
F
e
r o
r o
r o
a
n
e
C
e r
C
g i
o t
- r
- r
n
T
T
a
T
T
u
o t
o t
C
i D
C
t n
d
u
B -
e
p
a r
e
a r
o t
w
e r
r u
m
u
B -
E -
a
s s
m
a
G
n
o t
d i
n
f f
i c
p
s
e r
p
f s
a
m
f s
p i
a
h t
e
f f
e
C
a t
e
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
s
t n
n i
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
r e
r e
a r
t t i
t a
e
a r
r u
V
C
n
P
r e
o i
u t
c
l o
r u
V
u t
e r
C
G
o r
e
P
P
n
l o
a t
e r
a
a
e r
e r
V
t n
d
a
a
p
n i
a t
l o
g
u
a r
a r
t n
a
e
t c
g
a t
i c
m
m
e
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
g
a t
t e
t e
e
n
r e
r e
c
e
2
=9dB typ (f=1GHz).
SANYO Electric Co.,Ltd. Semiconductor Company
T
=6.7GHz typ.
FE
as follows :
|
S
S
V
V
V
S
I
I
h E
h E
y
T
y
C
E
C
C
C
C
E
P C
2
N
F 1
F 2
m
I C
m
j T
f T
s
B
B
o
1
B
E
B
e r
F
g t
b
b
b
O
O
e
O
O
O
l o
l o
9
|
2
0
M
V B
V B
V E
V E
V E
V B
V B
V E
V E
E
C
E
C
C
C
C
C
C
C
o
u
n
=
=
=
=
=
=
=
=
=
e t
1
1
Low-Noise Amplifier Applications
1
5
5
5
5
5
5
5
8
V
0
V
V
V
, V
, V
V
V
d
0
V
I ,
I ,
I ,
I ,
I ,
I ,
o
I ,
= f
= f
C 0
n
C
C
C
C
C
E 0
1
1
=
=
=
=
=
=
1
a
M
M
=
3
7
3
3
7
3
c
0
0
0
0
m
Package Dimensions
unit:mm
2038A
H
H
5
e
m
m
m
m
z
z
, A
a r
A
A
A
, A
m
= f
F
c i
= f
C
1
1
G
o
b
C
G
n
2
o
H
o
d
7
a
H
z
n
t i
d r
0
z
d
o i
t i
n
2 (
o i
s
5
n
0.4
0
s
NPN Epitaxial Planar Silicon Transistor
m
m
3
2
0.75
1.5
0
8 .
4.5
3.0
1.6
m
2
m
0.5
[2SC5415]
30300TS (KOTO) TA-1022 No.5911–1/6
)
High-Frequency
1
m
n i
9
7
7
* 0
5 .
0
5
R
2SC5415
t a
R
y t
0
1.5
n i
t a
p
6
1
6 .
1
–
0.4
g
7 .
2 .
1 .
n i
5
5
9
s
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
5
g
s
o t
m
+
2
a
1
8
1
1
7
1
1
2
x
2
1
0
0
5
5
1
* 0
0 .
8 .
0 .
0
2
2
0
0
0
0
0
G
U
m
U
m
˚C
˚C
µ
µ
d
d
p
p
V
V
V
H
n
n
W
A
A
B
B
F
F
A
t i
t i
z