2SC5939 Panasonic Semiconductor, 2SC5939 Datasheet
2SC5939
Manufacturer Part Number
2SC5939
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SC5939.pdf
(3 pages)
Transistors
2SC5939
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2004
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
• SSS-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common base)
Collector-base parameter
cuited) C
and automatic insertion through the tape packing
FE
ratio
ob
Parameter
Parameter
and reverse transfer capacitance (Common base) C
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
r
T
V
bb
P
I
T
V
V
CBO
CEO
EBO
a
∆h
I
C
stg
CE(sat)
C
C
h
C
' • C
CBO
j
f
CEO
EBO
= 25°C
FE
T
ob
rb
FE
C
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
V
C
E
C
100
125
CE
CB
CB
CE
CE
CE
CB
CB
15
10
50
= 10 µA, I
= 2 mA, I
= 20 mA, I
3
SJC00306AED
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 10 V, I
= 4 V, I
= 4 V, I
E
E
B
C
C
C
E
E
C
Conditions
Unit
mW
B
E
= −5 mA, f = 200 MHz
mA
= −5 mA, f = 31.9 MHz
= 0
= 5 mA
= 100 µA
= 5 mA
= 0, f = 1 MHz
= 0, f = 1 MHz
°C
°C
V
V
V
= 0
= 4 mA
= 0
rb
Marking Symbol: 1S
0.23
+0.05
–0.02
0.33
5˚
+0.05
–0.02
(0.40)
0.75
Min
3
0.80
1.20
1
1.4
10
75
3
±0.05
±0.05
(0.40)
2
0.45
Typ
1.9
1.4
11
SSSMini3-F1 Package
Max
400
1.6
0.5
2.7
1
0.10
+0.05
–0.02
1: Base
2: Emitter
3: Collector
Unit: mm
GHz
Unit
µA
pF
pF
ps
V
V
V
1
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2SC5939 Summary of contents
Page 1
... Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency f T • Small collector output capacitance (Common base, input open cir- cuited) C and reverse transfer capacitance (Common base • SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ ...
Page 2
... 120 100 100 120 140 Ambient temperature T (°C) a CE(sat 0.1 = 85° −25°C 25°C 0.01 0 Collector current I (mA 25°C = 500 µA ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...